Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets

Daeha Joung; A. Chunder; Lei Zhai; Saiful I. Khondaker

doi:10.1063/1.3484956

Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets

Daeha Joung, A. Chunder, Lei Zhai, Saiful I. Khondaker

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75× 1016 cm-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

Original language	English (US)
Article number	093105
Journal	Applied Physics Letters
Volume	97
Issue number	9
DOIs	https://doi.org/10.1063/1.3484956
State	Published - Aug 30 2010

Bibliographical note

Funding Information:
This work has been partially supported by U.S. NSF under Grant No. ECCS 0748091 to S.I.K. and under Grant No. DMR 0746499 to L.Z.

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abstract = "We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75× 1016 cm-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.",

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AU - Chunder, A.

AU - Zhai, Lei

AU - Khondaker, Saiful I.

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PY - 2010/8/30

Y1 - 2010/8/30

N2 - We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75× 1016 cm-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

AB - We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75× 1016 cm-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

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Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets

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