Solution-gated ion-sensitive field effect transistor with polymer selective membrane for nitrate detection

Jungyoon Kim; Qingyuan Liu; Tianhong Cui

doi:10.1115/IMECE2018-87918

Solution-gated ion-sensitive field effect transistor with polymer selective membrane for nitrate detection

Jungyoon Kim, Qingyuan Liu, Tianhong Cui

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In the paper, we fabricated a solution-gated ion-sensitive field effect transistor (IS-FET) and synthesized a selective membrane for the selective detection of nitrate. For sensor response, the level of Dirac point is measured to check the amount of nitrate in the water. Nitrate selective membrane is coated on graphene using a spin-coating method. The IS-FET is tested with four different ion solutions including chloride, sulfate, phosphate and nitrate at four different concentrations (0.1, 1, 10, 100 ppm). The Dirac point shift from -0.56 V to - 0.36 V as increasing the concentration. The detection limit is 0.1 ppm, and the response time is less than 1 min.

Original language	English (US)
Title of host publication	Advanced Manufacturing
Publisher	American Society of Mechanical Engineers (ASME)
ISBN (Electronic)	9780791852019
DOIs	https://doi.org/10.1115/IMECE2018-87918
State	Published - 2018
Event	ASME 2018 International Mechanical Engineering Congress and Exposition, IMECE 2018 - Pittsburgh, United States Duration: Nov 9 2018 → Nov 15 2018

Publication series

Name	ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
Volume	2

Conference

Conference	ASME 2018 International Mechanical Engineering Congress and Exposition, IMECE 2018
Country/Territory	United States
City	Pittsburgh
Period	11/9/18 → 11/15/18

Bibliographical note

Publisher Copyright:
Copyright © 2018 ASME

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10.1115/IMECE2018-87918

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Solution-gated ion-sensitive field effect transistor with polymer selective membrane for nitrate detection. / Kim, Jungyoon; Liu, Qingyuan; Cui, Tianhong.
Advanced Manufacturing. American Society of Mechanical Engineers (ASME), 2018. (ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE); Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, J, Liu, Q & Cui, T 2018, Solution-gated ion-sensitive field effect transistor with polymer selective membrane for nitrate detection. in Advanced Manufacturing. ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE), vol. 2, American Society of Mechanical Engineers (ASME), ASME 2018 International Mechanical Engineering Congress and Exposition, IMECE 2018, Pittsburgh, United States, 11/9/18. https://doi.org/10.1115/IMECE2018-87918

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abstract = "In the paper, we fabricated a solution-gated ion-sensitive field effect transistor (IS-FET) and synthesized a selective membrane for the selective detection of nitrate. For sensor response, the level of Dirac point is measured to check the amount of nitrate in the water. Nitrate selective membrane is coated on graphene using a spin-coating method. The IS-FET is tested with four different ion solutions including chloride, sulfate, phosphate and nitrate at four different concentrations (0.1, 1, 10, 100 ppm). The Dirac point shift from -0.56 V to - 0.36 V as increasing the concentration. The detection limit is 0.1 ppm, and the response time is less than 1 min.",

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AB - In the paper, we fabricated a solution-gated ion-sensitive field effect transistor (IS-FET) and synthesized a selective membrane for the selective detection of nitrate. For sensor response, the level of Dirac point is measured to check the amount of nitrate in the water. Nitrate selective membrane is coated on graphene using a spin-coating method. The IS-FET is tested with four different ion solutions including chloride, sulfate, phosphate and nitrate at four different concentrations (0.1, 1, 10, 100 ppm). The Dirac point shift from -0.56 V to - 0.36 V as increasing the concentration. The detection limit is 0.1 ppm, and the response time is less than 1 min.

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Solution-gated ion-sensitive field effect transistor with polymer selective membrane for nitrate detection

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