Single nanoparticle semiconductor devices

Yongping Ding, Ying Dong, Ameya Bapat, Julia D. Nowak, C. Barry Carter, Uwe R. Kortshagen, Stephen A. Campbell

Research output: Contribution to journalArticle

43 Scopus citations


Using a new technique in forming the cubic single-crystal silicon nanoparticles that are about 40 nm on a side, the authors have demonstrated a vertical-flow surround-gate Schottky-barrier transistor. This approach allows the use of well-known approaches to surface passivation and contact formation within the context of deposited single-crystal materials for device applications. It opens the door to the novel three-dimensional integrated circuits and new approaches to hyper integration. The fabrication process involves successive deposition and planarization and does not require nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 7 A/ cm 2.

Original languageEnglish (US)
Pages (from-to)2525-2531
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - 2006


  • FET
  • Nanoparticle
  • Schottky-barrier transistor
  • Silicon

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