Single nanoparticle semiconductor devices

Yongping Ding; Ying Dong; Ameya Bapat; Julia D. Nowak; C. Barry Carter; Uwe R. Kortshagen; Stephen A. Campbell

doi:10.1109/TED.2006.882047

Single nanoparticle semiconductor devices

Yongping Ding, Ying Dong, Ameya Bapat, Julia D. Nowak, C. Barry Carter, Uwe R. Kortshagen, Stephen A. Campbell

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Using a new technique in forming the cubic single-crystal silicon nanoparticles that are about 40 nm on a side, the authors have demonstrated a vertical-flow surround-gate Schottky-barrier transistor. This approach allows the use of well-known approaches to surface passivation and contact formation within the context of deposited single-crystal materials for device applications. It opens the door to the novel three-dimensional integrated circuits and new approaches to hyper integration. The fabrication process involves successive deposition and planarization and does not require nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 ⁷ A/ cm ².

Original language	English (US)
Pages (from-to)	2525-2531
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	10
DOIs	https://doi.org/10.1109/TED.2006.882047
State	Published - 2006

Bibliographical note

Funding Information:
Manuscript received October 13, 2005; revised July 10, 2006. This work was supported by the NSF through the NIRT grant DMI-0304211. The work that was done at the Minnesota Nanofabrication Center and at the Characterization Center was supported in part by the National Science Foundation through the NNIN program. The review of this paper was arranged by Editor R. Shrivastava.

Keywords

FET
Nanoparticle
Schottky-barrier transistor
Silicon

Publisher link

10.1109/TED.2006.882047

Find It

Find It at U of M Libraries

Cite this

@article{05956fc9ee3b466d864cb1d98ad6317c,

title = "Single nanoparticle semiconductor devices",

abstract = "Using a new technique in forming the cubic single-crystal silicon nanoparticles that are about 40 nm on a side, the authors have demonstrated a vertical-flow surround-gate Schottky-barrier transistor. This approach allows the use of well-known approaches to surface passivation and contact formation within the context of deposited single-crystal materials for device applications. It opens the door to the novel three-dimensional integrated circuits and new approaches to hyper integration. The fabrication process involves successive deposition and planarization and does not require nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 7 A/ cm 2.",

keywords = "FET, Nanoparticle, Schottky-barrier transistor, Silicon",

author = "Yongping Ding and Ying Dong and Ameya Bapat and Nowak, {Julia D.} and Carter, {C. Barry} and Kortshagen, {Uwe R.} and Campbell, {Stephen A.}",

note = "Funding Information: Manuscript received October 13, 2005; revised July 10, 2006. This work was supported by the NSF through the NIRT grant DMI-0304211. The work that was done at the Minnesota Nanofabrication Center and at the Characterization Center was supported in part by the National Science Foundation through the NNIN program. The review of this paper was arranged by Editor R. Shrivastava.",

year = "2006",

doi = "10.1109/TED.2006.882047",

language = "English (US)",

volume = "53",

pages = "2525--2531",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Single nanoparticle semiconductor devices

AU - Ding, Yongping

AU - Dong, Ying

AU - Bapat, Ameya

AU - Nowak, Julia D.

AU - Carter, C. Barry

AU - Kortshagen, Uwe R.

AU - Campbell, Stephen A.

N1 - Funding Information: Manuscript received October 13, 2005; revised July 10, 2006. This work was supported by the NSF through the NIRT grant DMI-0304211. The work that was done at the Minnesota Nanofabrication Center and at the Characterization Center was supported in part by the National Science Foundation through the NNIN program. The review of this paper was arranged by Editor R. Shrivastava.

PY - 2006

Y1 - 2006

N2 - Using a new technique in forming the cubic single-crystal silicon nanoparticles that are about 40 nm on a side, the authors have demonstrated a vertical-flow surround-gate Schottky-barrier transistor. This approach allows the use of well-known approaches to surface passivation and contact formation within the context of deposited single-crystal materials for device applications. It opens the door to the novel three-dimensional integrated circuits and new approaches to hyper integration. The fabrication process involves successive deposition and planarization and does not require nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 7 A/ cm 2.

AB - Using a new technique in forming the cubic single-crystal silicon nanoparticles that are about 40 nm on a side, the authors have demonstrated a vertical-flow surround-gate Schottky-barrier transistor. This approach allows the use of well-known approaches to surface passivation and contact formation within the context of deposited single-crystal materials for device applications. It opens the door to the novel three-dimensional integrated circuits and new approaches to hyper integration. The fabrication process involves successive deposition and planarization and does not require nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 7 A/ cm 2.

KW - FET

KW - Nanoparticle

KW - Schottky-barrier transistor

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=34249064507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249064507&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.882047

DO - 10.1109/TED.2006.882047

M3 - Article

AN - SCOPUS:34249064507

SN - 0018-9383

VL - 53

SP - 2525

EP - 2531

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Single nanoparticle semiconductor devices

Abstract

Bibliographical note

Keywords

Publisher link

Find It

Other files and links

Fingerprint

Cite this