Single nanoparticle semiconductor devices

Yongping Ding, Ying Dong, Ameya Bapat, Julia Deneen, C. Barry Carter, Uwe R. Kortshagen, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Using a new technique for forming cubic, single crystal silicon nanoparticles about 40 nm on a side, the authors have demonstrated a vertical flow, surround gate, Schottky barrier transistor. This approach allows the use of well known approaches to surface passivation and contact formation within the context of deposited single crystal materials for device applications. It opens the door to novel three dimensional integrated circuits and new approaches to hyper-integration. The fabrication process involves successive deposition and planarization and does not require any type of nonoptical lithography. Device characteristics show reasonable turn-off characteristics and on-current densities of more than 10 7 A/cm 2.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsW.Y. Lai, L.E. Ocola, S. Pau
Volume6002
DOIs
StatePublished - 2005
EventNanofabrication: Technologies, Devices, and Applications II - Boston, MA, United States
Duration: Oct 23 2005Oct 25 2005

Other

OtherNanofabrication: Technologies, Devices, and Applications II
CountryUnited States
CityBoston, MA
Period10/23/0510/25/05

Keywords

  • FET
  • Nanoparticle
  • Schottky barrier transistor
  • Silicon

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