TY - JOUR
T1 - Single ion conducting, polymerized ionic liquid triblock copolymer films
T2 - High capacitance electrolyte gates for N-type transistors
AU - Choi, Jae Hong
AU - Xie, Wei
AU - Gu, Yuanyan
AU - Frisbie, C. Daniel
AU - Lodge, Timothy P.
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/4/8
Y1 - 2015/4/8
N2 - There has been impressive progress in the fabrication and characterization of p-type organic electrolyte-gated transistors (EGTs). Unfortunately, despite the importance of n-type organic transistors for complementary circuits, fewer investigations have focused on developing electrolytes as gate dielectrics for n-type organic semiconductors. Here, we present a novel single ion conductor, a polymerized ionic liquid (PIL) triblock copolymer (PS-PIL-PS) composed of styrene (PS) and 1-[(2-acryloyloxy)ethyl]-3-butylimidazolium bis(trifluoromethylsulfonyl)imide (PIL), that conducts only the TFSI anion. This triblock copolymer acts as a gate dielectric to allow low-voltage n-type organic EGT operation. Impedance characterization of PS-PIL-PS reveals that there are three polarization regions: (1) dipolar relaxation, (2) ion migration, and (3) electric double layer (EDL) formation. These polarization regions are controlled by film thickness, and rapid EDL formation can be obtained in thinner polyelectrolyte films. In particular, a 500 nm-thick polyelectrolyte film exhibits a large capacitance of ∼1 μF/cm2 at 10 kHz. Employing this single ion conducting PIL triblock copolymer as the gate insulator, we achieved low voltage operation (<1 V supply) of poly{[N,N-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5-(2,2-bithiophene)} (P(NDI2OD-T2)) n-type organic EGTs (electron mobility of ∼0.008 cm2/(V·s) and ON/OFF current ratio of ∼2 × 103) by preventing electrochemical doping. Furthermore, the recognition that the performance of n-type organic EGTs is diminished by 3D electrochemical doping suggests that it may be necessary to have a unipolar electrolyte to gate n-type organic semiconductors. Finally, we highlight that the use of PIL block copolymer electrolytes as gate insulators opens unique opportunities to explore the role of ion penetration in n-type organic EGTs by tuning the extent of electrochemical doping.
AB - There has been impressive progress in the fabrication and characterization of p-type organic electrolyte-gated transistors (EGTs). Unfortunately, despite the importance of n-type organic transistors for complementary circuits, fewer investigations have focused on developing electrolytes as gate dielectrics for n-type organic semiconductors. Here, we present a novel single ion conductor, a polymerized ionic liquid (PIL) triblock copolymer (PS-PIL-PS) composed of styrene (PS) and 1-[(2-acryloyloxy)ethyl]-3-butylimidazolium bis(trifluoromethylsulfonyl)imide (PIL), that conducts only the TFSI anion. This triblock copolymer acts as a gate dielectric to allow low-voltage n-type organic EGT operation. Impedance characterization of PS-PIL-PS reveals that there are three polarization regions: (1) dipolar relaxation, (2) ion migration, and (3) electric double layer (EDL) formation. These polarization regions are controlled by film thickness, and rapid EDL formation can be obtained in thinner polyelectrolyte films. In particular, a 500 nm-thick polyelectrolyte film exhibits a large capacitance of ∼1 μF/cm2 at 10 kHz. Employing this single ion conducting PIL triblock copolymer as the gate insulator, we achieved low voltage operation (<1 V supply) of poly{[N,N-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5-(2,2-bithiophene)} (P(NDI2OD-T2)) n-type organic EGTs (electron mobility of ∼0.008 cm2/(V·s) and ON/OFF current ratio of ∼2 × 103) by preventing electrochemical doping. Furthermore, the recognition that the performance of n-type organic EGTs is diminished by 3D electrochemical doping suggests that it may be necessary to have a unipolar electrolyte to gate n-type organic semiconductors. Finally, we highlight that the use of PIL block copolymer electrolytes as gate insulators opens unique opportunities to explore the role of ion penetration in n-type organic EGTs by tuning the extent of electrochemical doping.
KW - Organic semiconductor
KW - Polyelectrolyte
KW - Polymerized ionic liquid
KW - Single ion conductor
KW - Thin-film transistor
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U2 - 10.1021/acsami.5b00495
DO - 10.1021/acsami.5b00495
M3 - Article
C2 - 25821907
AN - SCOPUS:84926643731
SN - 1944-8244
VL - 7
SP - 7294
EP - 7302
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 13
ER -