Single crystal gallium nitride nanomembrane photoconductor and field effect transistor

Kanglin Xiong, Sung Hyun Park, Jie Song, Ge Yuan, Danti Chen, Benjamin Leung, Jung Han

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Large-area, free-standing and single-crystalline GaN nanomembranes are prepared by electrochemical etching from epitaxial layers. As-prepared nanomembranes are highly resistive but can become electronically active upon optical excitation, with an excellent electron mobility. The interaction of excited carriers with surface states is investigated by intensity-dependent photoconductivity gain and temperature-dependent photocurrent decay. Normally off enhancement-type GaN nanomembrane MOS transistors are demonstrated, suggesting that GaN could be used in flexible electronics for high power and high frequency applications. Large-area, free-standing and single-crystalline GaN nanomembranes with an excellent electron mobility are prepared by electrochemical etching from epitaxial layers. The interaction of carriers with surface states is investigated by UV-assisted Hall measurement and photoconductance. Normally-off enhancement-type GaN nanomembrane MOS transistors are demonstrated, suggesting that GaN could be used in flexible electronics for high power and high frequency applications.

Original languageEnglish (US)
Pages (from-to)6503-6508
Number of pages6
JournalAdvanced Functional Materials
Volume24
Issue number41
DOIs
StatePublished - Nov 5 2014

Keywords

  • field effect transistor
  • gallium nitride
  • mobility
  • nanomembrane
  • photocurrent

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