Simulations of atomic level stresses in systems of buried Ge/Si islands

M. A. Makeev; A. Madhukar

doi:10.1103/PhysRevLett.86.5542

Simulations of atomic level stresses in systems of buried Ge/Si islands

M. A. Makeev, A. Madhukar

Chemistry (Twin Cities)

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54 Scopus citations

Abstract

Atomistic simulation of a system of buried pyramidal islands using the Stillinger-Weber Ge/Si system as a vehicle was conducted. It was found that the hydrostatic stress on the spacer surface above the island apex varies as 1/h_sp and is proportional to the island area.

Original language	English (US)
Pages (from-to)	5542-5545
Number of pages	4
Journal	Physical review letters
Volume	86
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevLett.86.5542
State	Published - Jun 11 2001

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title = "Simulations of atomic level stresses in systems of buried Ge/Si islands",

abstract = "Atomistic simulation of a system of buried pyramidal islands using the Stillinger-Weber Ge/Si system as a vehicle was conducted. It was found that the hydrostatic stress on the spacer surface above the island apex varies as 1/hsp and is proportional to the island area.",

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Simulations of atomic level stresses in systems of buried Ge/Si islands

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