TY - GEN
T1 - Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects
AU - Grassi, Roberto
AU - Gnudi, Antonio
AU - Reggiani, Susanna
AU - Gnani, Elena
AU - Baccarani, Giorgio
PY - 2009
Y1 - 2009
N2 - Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal NA = 12 nanoribbon FET, a 1890 μA/μm ON current and an ON/OFF current ratio in excess of 105 can be achieved with VDD = 0.4V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.
AB - Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal NA = 12 nanoribbon FET, a 1890 μA/μm ON current and an ON/OFF current ratio in excess of 105 can be achieved with VDD = 0.4V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.
UR - http://www.scopus.com/inward/record.url?scp=67650679324&partnerID=8YFLogxK
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U2 - 10.1109/ULIS.2009.4897538
DO - 10.1109/ULIS.2009.4897538
M3 - Conference contribution
AN - SCOPUS:67650679324
SN - 9781424437054
T3 - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
SP - 57
EP - 60
BT - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
T2 - 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Y2 - 18 March 2009 through 20 March 2009
ER -