Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects

Roberto Grassi; Antonio Gnudi; Susanna Reggiani; Elena Gnani; Giorgio Baccarani

doi:10.1109/ULIS.2009.4897538

Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects

Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal NA = 12 nanoribbon FET, a 1890 μA/μm ON current and an ON/OFF current ratio in excess of 10⁵ can be achieved with V_DD = 0.4V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.

Original language	English (US)
Title of host publication	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Pages	57-60
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2009.4897538
State	Published - 2009
Event	10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany Duration: Mar 18 2009 → Mar 20 2009

Publication series

Name	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Other

Other	10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Country	Germany
City	Aachen
Period	3/18/09 → 3/20/09

Access

10.1109/ULIS.2009.4897538

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Grassi, R., Gnudi, A., Reggiani, S., Gnani, E., & Baccarani, G. (2009). Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp. 57-60). [4897538] (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). https://doi.org/10.1109/ULIS.2009.4897538

Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects. / Grassi, Roberto; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena; Baccarani, Giorgio.

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. p. 57-60 4897538 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grassi, R, Gnudi, A, Reggiani, S, Gnani, E & Baccarani, G 2009, Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects. in Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009., 4897538, Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, pp. 57-60, 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, Aachen, Germany, 3/18/09. https://doi.org/10.1109/ULIS.2009.4897538

Grassi R, Gnudi A, Reggiani S, Gnani E, Baccarani G. Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. p. 57-60. 4897538. (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). https://doi.org/10.1109/ULIS.2009.4897538

Grassi, Roberto ; Gnudi, Antonio ; Reggiani, Susanna ; Gnani, Elena ; Baccarani, Giorgio. / Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects. Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. pp. 57-60 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).

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