Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects

Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal NA = 12 nanoribbon FET, a 1890 μA/μm ON current and an ON/OFF current ratio in excess of 105 can be achieved with VDD = 0.4V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.

Original languageEnglish (US)
Title of host publicationProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Pages57-60
Number of pages4
DOIs
StatePublished - 2009
Event10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany
Duration: Mar 18 2009Mar 20 2009

Publication series

NameProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Other

Other10th International Conference on ULtimate Integration of Silicon, ULIS 2009
CountryGermany
CityAachen
Period3/18/093/20/09

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