Simulation of heterojunction bipolar transistor with domain decomposition method

Y. Zhang, P. P. Ruden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures are designed and the trade-off is discussed.

Original languageEnglish (US)
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages624-627
Number of pages4
StatePublished - Dec 1 2002
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Publication series

Name2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Other

Other2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

Keywords

  • Domain decomposition method
  • GaN
  • HBT
  • Polarization charge

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