@inproceedings{0f3adc3ab4e740d7b1ed2628ebd1802d,
title = "Simulation of heterojunction bipolar transistor with domain decomposition method",
abstract = "Domain decomposition method is used in simulation of the band profile and the majority carrier concentration profile of AlGaN/GaN heterojunction bipolar transistors. The method is very stable and efficient. With this method different device structures are designed and the trade-off is discussed.",
keywords = "Domain decomposition method, GaN, HBT, Polarization charge",
author = "Y. Zhang and Ruden, {P. P.}",
year = "2002",
language = "English (US)",
isbn = "0970827571",
series = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
pages = "624--627",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
note = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 ; Conference date: 21-04-2002 Through 25-04-2002",
}