Abstract
GaAs p-i-n diodes have been modeled using simulation, and the results have been compared to experiment. The simulations predict that with a lifetime of the carriers of 10-7 s, devices that have good i-layer modulation may be built. This is in agreement with currently available commercial devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 414-417 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 35 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1988 |
Bibliographical note
Funding Information:Manuscript received August, 24, 1987; revised November 17, 1987. This work was sponsored by the Department of the Army. A. Gopinath was with the MIT Lincoln Laboratory, Lexington, MA 02173. He is now with the Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455. H. Atwater was with the MIT Lincoln Laboratory, Lexington, MA 02173. He is now with the Naval Postgraduate School, Monterey, CA 93940. IEEE Log Number 8718964.