Simulation of dislocations imaged moirfringe contrast

James E. Angelo, William W Gerberich

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Transemission electron microscope (TEM) images of dislocations as produced via moirfringe contrast are simulated using manybeam diffraction theory. The effect of edge dislocations on both parallel and rotational moirfringe patterns is considered. For the parallel moirfringe pattern, images of dislocations both perpendicular to the film plane and those inclined to the film plane are produced. The effect of an inclined dislocation is shown to cause a distortion of the dislocation image. Finally, a comparison between predicted and experimentally observed images is made, with the results indicating that threating dislocations in the FeAl/GaAs system have line directions nearly perpendicular to the (001)FeAl/GaAs film plane.1993 WileyLiss, Inc. Copyright1993 WileyLiss, Inc.

Original languageEnglish (US)
Pages (from-to)185-192
Number of pages8
JournalMicroscopy Research and Technique
Volume24
Issue number2
DOIs
StatePublished - Feb 1 1993

Keywords

  • Dislocations
  • Electron microscopy
  • Epitaxy

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