A discussion of some of the difficulties with previous analyses of the resistivity of A-15 compounds is given. Precise high-temperature data on α-particle- and electron-damaged Nb3Ge and Nb3Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.
Bibliographical noteFunding Information:
Work supported in part by National Science Foundation Grant No. DMR 73-07578A01; currently on leave at Physics Department, University of California, Berkeley, Calif. 94708 until June 1977.
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