Simple model for characterizing the electrical resistivity in A-15 superconductors

H. Wiesmann; M. Gurvitch; H. Lutz; A. Ghosh; B. Schwarz; Myron Strongin; P. B. Allen; J. W. Halley

doi:10.1103/PhysRevLett.38.782

Simple model for characterizing the electrical resistivity in A-15 superconductors

H. Wiesmann, M. Gurvitch, H. Lutz, A. Ghosh, B. Schwarz, Myron Strongin, P. B. Allen, J. W. Halley

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

265 Scopus citations

Abstract

A discussion of some of the difficulties with previous analyses of the resistivity of A-15 compounds is given. Precise high-temperature data on α-particle- and electron-damaged Nb3Ge and Nb3Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.

Original language	English (US)
Pages (from-to)	782-785
Number of pages	4
Journal	Physical review letters
Volume	38
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevLett.38.782
State	Published - 1977

Bibliographical note

Funding Information:
Work supported in part by National Science Foundation Grant No. DMR 73-07578A01; currently on leave at Physics Department, University of California, Berkeley, Calif. 94708 until June 1977.

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Copyright 2015 Elsevier B.V., All rights reserved.

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10.1103/PhysRevLett.38.782

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title = "Simple model for characterizing the electrical resistivity in A-15 superconductors",

abstract = "A discussion of some of the difficulties with previous analyses of the resistivity of A-15 compounds is given. Precise high-temperature data on α-particle- and electron-damaged Nb3Ge and Nb3Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.",

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note = "Funding Information: Work supported in part by National Science Foundation Grant No. DMR 73-07578A01; currently on leave at Physics Department, University of California, Berkeley, Calif. 94708 until June 1977. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

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AU - Wiesmann, H.

AU - Gurvitch, M.

AU - Lutz, H.

AU - Ghosh, A.

AU - Schwarz, B.

AU - Strongin, Myron

AU - Allen, P. B.

AU - Halley, J. W.

N1 - Funding Information: Work supported in part by National Science Foundation Grant No. DMR 73-07578A01; currently on leave at Physics Department, University of California, Berkeley, Calif. 94708 until June 1977. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

PY - 1977

Y1 - 1977

N2 - A discussion of some of the difficulties with previous analyses of the resistivity of A-15 compounds is given. Precise high-temperature data on α-particle- and electron-damaged Nb3Ge and Nb3Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.

AB - A discussion of some of the difficulties with previous analyses of the resistivity of A-15 compounds is given. Precise high-temperature data on α-particle- and electron-damaged Nb3Ge and Nb3Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.

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Simple model for characterizing the electrical resistivity in A-15 superconductors

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