Silicon-on-sapphire for RF Si systems 2000

I. Lagnado, P. R. De La Houssaye, W. B. Dubbelday, S. J. Koester, R. Hammond, J. O. Chu, J. A. Ott, P. M. Mooney, L. Perraud, K. A. Jenkins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The major issues, which confronted the formation of very thin layers of silicon (30-100 nm) on sapphire substrates for application to MM-wave communication and sensors were investigated. The focus of the investigation was, and still is, to achieve a structure in which the modern CMOS technology, the mainstay technology and workhorse of the electronic revolution, can be affordably implemented. In this context the application of device-quality thin film silicon-on-sapphire (TFSOS), obtained by Solid Phase Epitaxy (SPE), and the growth of strained silicon-germanium (SiGe) layers on these improved thin silicon films on sapphire have demonstrated enhanced devices and circuits performance. We have fabricated 250 nm T-gated devices with noise figures as low as 0.9 dB at 2 GHz with an associated gain of 21 dB, incorporated them in a distributed wide-band amplifier (10 GHz BW, world record), tuned amplifiers (15 dB peak gain, 4 GHz BW), LNA's, mixers, and TR switches; f5 (fmax) of 105 GHz (50 GHz) for n-channel and 49 GHz (95 GHz) for p-MODFETs with 100 nm T-gates (strained Si0.2Ge0.8 on a relaxed Si0.7Ge0.3 heterostructure).

Original languageEnglish (US)
Title of host publication2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
EditorsWalter Fisch, George E. Ponchak
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages79-82
Number of pages4
ISBN (Electronic)0780362551, 9780780362550
DOIs
StatePublished - Jan 1 2000
Event2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000 - Garmisch, Germany
Duration: Apr 28 2000 → …

Publication series

Name2000 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Other

Other2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Silicon RF 2000
CountryGermany
CityGarmisch
Period4/28/00 → …

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