Silicon carbide power transistors, characterization for smart grid applications

S. Tiwari, T. Undeland, S. Basu, William P Robbins

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

Silicon carbide (SiC) has superior material properties appropriate for transistor applications at high frequency, high voltage, high power and high temperature. These properties give SiC transistors low conduction losses and fast switching capability. This paper addresses the dynamic characteristics of available SiC power transistors including JFETs, BJTs and MOSFETs which are quite promising for smart grid applications. A standard double pulse test with a clamped inductive load has been used for dynamic characterization of the power transistors at different temperatures, load conditions and configurations.

Original languageEnglish (US)
Title of host publication15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe
DOIs
StatePublished - Dec 1 2012
Event15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe - Novi Sad, Serbia
Duration: Sep 4 2012Sep 6 2012

Other

Other15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe
CountrySerbia
CityNovi Sad
Period9/4/129/6/12

Keywords

  • Double Pulse Test
  • Silicon Carbide Power Transistors

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