SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax

S. J. Koester, R. Hammond, J. O. Chu, P. M. Mooney, J. A. Ott, L. Perraud, K. A. Jenkins, C. S. Webster, I. Lagnado, P. R. De La Houssaye

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The dc and microwave results of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with Lg = 0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (fmax) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.

Original languageEnglish (US)
Pages (from-to)92-94
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 2001

Bibliographical note

Funding Information:
Manuscript received September 6, 2000. This work was supported by SPAWAR Systems Center, SD/Office of Naval Research under Contract N66001-99-C-6000. The review of this letter was arranged by Editor K. De Meyer. S. J. Koester, J. O. Chu, P. M. Mooney, J. A. Ott, L. Perraud, K. A. Jenkins are with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598 USA. R. Hammond is with Amberwave Systems Corporation, Salem NH 03079 USA. C. S. Webster is with Agilent Technologies, Williston, VT 05495 USA. I. Lagnado and P. R. de la Houssaye are with the Space and Naval Warfare Systems Center, San Diego, CA 92152 USA. Publisher Item Identifier S 0741-3106(01)01239-3.


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