SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax

S. J. Koester, R. Hammond, J. O. Chu, P. M. Mooney, J. A. Ott, L. Perraud, K. A. Jenkins, C. S. Webster, I. Lagnado, P. R. De La Houssaye

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33 Scopus citations

Abstract

The dc and microwave results of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with Lg = 0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (fmax) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.

Original languageEnglish (US)
Pages (from-to)92-94
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number2
DOIs
StatePublished - Feb 1 2001

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