SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

L. J. Huang; J. O. Chu; D. F. Canaperi; C. P. D'Emic; R. M. Anderson; S. J. Koester; H. S.Philip Wong

doi:10.1063/1.1342212

SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

L. J. Huang, J. O. Chu, D. F. Canaperi, C. P. D'Emic, R. M. Anderson, S. J. Koester, H. S.Philip Wong

Electrical and Computer Engineering

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Abstract

SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm²/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.

Original language	English (US)
Pages (from-to)	1267-1269
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	9
DOIs	https://doi.org/10.1063/1.1342212
State	Published - Feb 26 2001

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title = "SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors",

abstract = "SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15\% to 25\%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.",

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AU - Huang, L. J.

AU - Chu, J. O.

AU - Canaperi, D. F.

AU - D'Emic, C. P.

AU - Anderson, R. M.

AU - Koester, S. J.

AU - Wong, H. S.Philip

PY - 2001/2/26

Y1 - 2001/2/26

N2 - SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.

AB - SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.

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SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

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