SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

L. J. Huang, J. O. Chu, D. F. Canaperi, C. P. D'Emic, R. M. Anderson, S. J. Koester, H. S.Philip Wong

Research output: Contribution to journalArticlepeer-review

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Abstract

SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.

Original languageEnglish (US)
Pages (from-to)1267-1269
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number9
DOIs
StatePublished - Feb 26 2001

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