Abstract
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/ chemical vapor deposition process at 550 °C. An electron mobility of 40 000cm2/Vs in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.
Original language | English (US) |
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Pages (from-to) | 1267-1269 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 9 |
DOIs | |
State | Published - Feb 26 2001 |