SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling

S. J. Koester, K. L. Saenger, J. O. Chu, Q. C. Ouyang, J. A. Ott, S. W. Bedell, D. F. Canaperi, J. A. Tornello, C. V. Jahnes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiGe MODFETs are attractive devices for future rf and mixed-signal communications applications, due to their greatly enhanced mobility compared to Si MOSFETs. However, MODFETs have been slow to keep pace with the tremendous advances in scaling technology that have allowed Si MOSFETs to maintain performance leadership, both for digital and analog applications. In order to fulfill their promise for enhanced performance, MODFETs must also be aggressively scaled. In this paper, we provide a description of recent results on sub-100 nm gate-length Si/Si 0.7Ge 0.3 n-MODFETs, and describe the device design and materials issues for the future scalability of these devices.

Original languageEnglish (US)
Title of host publicationSiGe
Subtitle of host publicationMaterials, Processing, and Devices - Proceedings of the First Symposium
EditorsD. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, B. Tillack
Pages449-458
Number of pages10
Volume7
StatePublished - Dec 1 2004
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

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