Si(001) step dynamics

Chris Pearson, Brian Borovsky, Michael Krueger, Robert Curtis, Eric Ganz

Research output: Contribution to journalArticlepeer-review

85 Scopus citations


We used a scanning tunneling microscope to study the dynamics of step edges on the Si(001)- 2×1 reconstructed surface at temperatures from 520 to 700 K. We count changes in step edge position to determine the rates of attachment and detachment events which occur in units of four Si atoms (two dimers). Surface mass transport at these temperatures is dominated by kink diffusion. From an Arrhenius plot we find the effective activation energy for kink diffusion to be 0.97±0.12 eV with a prefactor of 3×105 s-1.

Original languageEnglish (US)
Pages (from-to)2710-2713
Number of pages4
JournalPhysical review letters
Issue number14
StatePublished - 1995

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