Self-aligned gate heterostructure FETs with gate lengths varying from 0.3 to 1.5 μm were fabricated to study short-channel effects. Peak extrinsic transconductance as high as 360 mS/mm was achieved with this process. Short-channel effects such as increases in the output conductance, increases in the subthreshold current, and shifts in the threshold voltage are reported for temperatures ranging from 30°C to 100°C. The observations follow closely predictions from a simple model which attributes the effects to space-charge-limited electron injection into the GaAs buffer layer beneath the actual two-dimensional electron gas channel.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Dec 1 1988|
|Event||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
Duration: Dec 11 1988 → Dec 14 1988