Sericin for resistance switching device with multilevel nonvolatile memory

Hong Wang; Fanben Meng; Yurong Cai; Liyan Zheng; Yuangang Li; Yuanjun Liu; Yueyue Jiang; Xiaotian Wang; Xiaodong Chen

doi:10.1002/adma.201301983

Sericin for resistance switching device with multilevel nonvolatile memory

Hong Wang
, Fanben Meng
, Yurong Cai
, Liyan Zheng
, Yuangang Li
, Yuanjun Liu
, Yueyue Jiang
, Xiaotian Wang
, Xiaodong Chen

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

237 Scopus citations

Abstract

Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10⁶ have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

Original language	English (US)
Pages (from-to)	5498-5503
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	38
DOIs	https://doi.org/10.1002/adma.201301983
State	Published - Oct 11 2013

Keywords

electronic device
multilevel memory
protein
resistance switching
sericin

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10.1002/adma.201301983

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title = "Sericin for resistance switching device with multilevel nonvolatile memory",

abstract = "Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.",

keywords = "electronic device, multilevel memory, protein, resistance switching, sericin",

author = "Hong Wang and Fanben Meng and Yurong Cai and Liyan Zheng and Yuangang Li and Yuanjun Liu and Yueyue Jiang and Xiaotian Wang and Xiaodong Chen",

year = "2013",

month = oct,

day = "11",

doi = "10.1002/adma.201301983",

language = "English (US)",

volume = "25",

pages = "5498--5503",

journal = "Advanced Materials",

issn = "0935-9648",

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TY - JOUR

T1 - Sericin for resistance switching device with multilevel nonvolatile memory

AU - Wang, Hong

AU - Meng, Fanben

AU - Cai, Yurong

AU - Zheng, Liyan

AU - Li, Yuangang

AU - Liu, Yuanjun

AU - Jiang, Yueyue

AU - Wang, Xiaotian

AU - Chen, Xiaodong

PY - 2013/10/11

Y1 - 2013/10/11

N2 - Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

AB - Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

KW - electronic device

KW - multilevel memory

KW - protein

KW - resistance switching

KW - sericin

UR - https://www.scopus.com/pages/publications/84885869032

UR - https://www.scopus.com/pages/publications/84885869032#tab=citedBy

U2 - 10.1002/adma.201301983

DO - 10.1002/adma.201301983

M3 - Article

C2 - 23893500

AN - SCOPUS:84885869032

SN - 0935-9648

VL - 25

SP - 5498

EP - 5503

JO - Advanced Materials

JF - Advanced Materials

IS - 38

ER -

Sericin for resistance switching device with multilevel nonvolatile memory

Abstract

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