Sericin for resistance switching device with multilevel nonvolatile memory

Hong Wang, Fanben Meng, Yurong Cai, Liyan Zheng, Yuangang Li, Yuanjun Liu, Yueyue Jiang, Xiaotian Wang, Xiaodong Chen

Research output: Contribution to journalArticlepeer-review

150 Scopus citations

Abstract

Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

Original languageEnglish (US)
Pages (from-to)5498-5503
Number of pages6
JournalAdvanced Materials
Volume25
Issue number38
DOIs
StatePublished - Jul 31 2013

Keywords

  • electronic device
  • multilevel memory
  • protein
  • resistance switching
  • sericin

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