Separating Electrons and Donors in BaSnO3 via Band Engineering

Abhinav Prakash; Nicholas F. Quackenbush; Hwanhui Yun; Jacob Held; Tianqi Wang; Tristan Truttmann; James M. Ablett; Conan Weiland; Tien Lin Lee; Joseph C. Woicik; K. Andre Mkhoyan; Bharat Jalan

doi:10.1021/acs.nanolett.9b03825

Separating Electrons and Donors in BaSnO₃ via Band Engineering

Abhinav Prakash, Nicholas F. Quackenbush, Hwanhui Yun, Jacob Held, Tianqi Wang, Tristan Truttmann, James M. Ablett, Conan Weiland, Tien Lin Lee, Joseph C. Woicik, K. Andre Mkhoyan, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Separating electrons from their source atoms in La-doped BaSnO₃, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO₃ as an active layer. Here we report the demonstration of modulation doping in BaSnO₃ as the high room-temperature mobility host without the use of SrTiO₃. Significantly, we show the use of angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) as a nondestructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO₃. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.

Original language	English (US)
Pages (from-to)	8920-8927
Number of pages	8
Journal	Nano letters
DOIs	https://doi.org/10.1021/acs.nanolett.9b03825
State	Published - Sep 16 2019

Bibliographical note

Funding Information:
The authors thank C. J. Powell for discussions regarding effective attenuation length calculations. This work was primarily supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205 and in part through Grant FA9550-19-1-0245. Part of this work is supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS-1542202. A.P. acknowledges support from University of Minnesota Doctoral Dissertation Fellowship. We also acknowledge partial support from the renewable development funds (RDF) of the Institute on the Environment (UMN) and the Norwegian Centennial Chair Program seed funds. Parts of this research were performed while N.F.Q. held a National Institute of Standards and Technology (NIST) National Research Council (NRC) Research Postdoctoral Associateship Award at the Material Measurement Lab. We thank Diamond Light Source for access to beamline I-09 (SI15845-1) that contributed to the results presented here.

Publisher Copyright:
© 2019 American Chemical Society.

Keywords

alkaline-earth stannate
band alignment
charge transfer
Modulation doping
transparent conductor
wide band gap material

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Research Support, U.S. Gov't, Non-P.H.S.

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title = "Separating Electrons and Donors in BaSnO3 via Band Engineering",

abstract = "Separating electrons from their source atoms in La-doped BaSnO3, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO3 as an active layer. Here we report the demonstration of modulation doping in BaSnO3 as the high room-temperature mobility host without the use of SrTiO3. Significantly, we show the use of angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) as a nondestructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO3. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schr{\"o}dinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.",

keywords = "alkaline-earth stannate, band alignment, charge transfer, Modulation doping, transparent conductor, wide band gap material",

author = "Abhinav Prakash and Quackenbush, {Nicholas F.} and Hwanhui Yun and Jacob Held and Tianqi Wang and Tristan Truttmann and Ablett, {James M.} and Conan Weiland and Lee, {Tien Lin} and Woicik, {Joseph C.} and Mkhoyan, {K. Andre} and Bharat Jalan",

note = "Funding Information: The authors thank C. J. Powell for discussions regarding effective attenuation length calculations. This work was primarily supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205 and in part through Grant FA9550-19-1-0245. Part of this work is supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS-1542202. A.P. acknowledges support from University of Minnesota Doctoral Dissertation Fellowship. We also acknowledge partial support from the renewable development funds (RDF) of the Institute on the Environment (UMN) and the Norwegian Centennial Chair Program seed funds. Parts of this research were performed while N.F.Q. held a National Institute of Standards and Technology (NIST) National Research Council (NRC) Research Postdoctoral Associateship Award at the Material Measurement Lab. We thank Diamond Light Source for access to beamline I-09 (SI15845-1) that contributed to the results presented here. Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

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doi = "10.1021/acs.nanolett.9b03825",

language = "English (US)",

pages = "8920--8927",

journal = "Nano letters",

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T1 - Separating Electrons and Donors in BaSnO3 via Band Engineering

AU - Prakash, Abhinav

AU - Quackenbush, Nicholas F.

AU - Yun, Hwanhui

AU - Held, Jacob

AU - Wang, Tianqi

AU - Truttmann, Tristan

AU - Ablett, James M.

AU - Weiland, Conan

AU - Lee, Tien Lin

AU - Woicik, Joseph C.

AU - Mkhoyan, K. Andre

AU - Jalan, Bharat

N1 - Funding Information: The authors thank C. J. Powell for discussions regarding effective attenuation length calculations. This work was primarily supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant FA9550-16-1-0205 and in part through Grant FA9550-19-1-0245. Part of this work is supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award Number ECCS-1542202. A.P. acknowledges support from University of Minnesota Doctoral Dissertation Fellowship. We also acknowledge partial support from the renewable development funds (RDF) of the Institute on the Environment (UMN) and the Norwegian Centennial Chair Program seed funds. Parts of this research were performed while N.F.Q. held a National Institute of Standards and Technology (NIST) National Research Council (NRC) Research Postdoctoral Associateship Award at the Material Measurement Lab. We thank Diamond Light Source for access to beamline I-09 (SI15845-1) that contributed to the results presented here. Publisher Copyright: © 2019 American Chemical Society.

PY - 2019/9/16

Y1 - 2019/9/16

N2 - Separating electrons from their source atoms in La-doped BaSnO3, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO3 as an active layer. Here we report the demonstration of modulation doping in BaSnO3 as the high room-temperature mobility host without the use of SrTiO3. Significantly, we show the use of angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) as a nondestructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO3. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.

AB - Separating electrons from their source atoms in La-doped BaSnO3, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO3 as an active layer. Here we report the demonstration of modulation doping in BaSnO3 as the high room-temperature mobility host without the use of SrTiO3. Significantly, we show the use of angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) as a nondestructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO3. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.

KW - alkaline-earth stannate

KW - band alignment

KW - charge transfer

KW - Modulation doping

KW - transparent conductor

KW - wide band gap material

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DO - 10.1021/acs.nanolett.9b03825

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AN - SCOPUS:85075580598

SN - 1530-6984

SP - 8920

EP - 8927

JO - Nano letters

JF - Nano letters

ER -

Separating Electrons and Donors in BaSnO₃ via Band Engineering

Abstract

Bibliographical note

Keywords

MRSEC Support

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UN SDGs

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MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this

Separating Electrons and Donors in BaSnO3 via Band Engineering

Abstract

Bibliographical note

Keywords

MRSEC Support

PubMed: MeSH publication types

UN SDGs

Publisher link

Find It

Other files and links

Fingerprint

Projects

MRSEC IRG-2: Sustainable Nanocrystal Materials

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this

Separating Electrons and Donors in BaSnO₃ via Band Engineering