Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor

Yingming Xu; Peng Zhou; Terrence Simon; Tianhong Cui

doi:10.1109/MEMS58180.2024.10439578

Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor

Yingming Xu, Peng Zhou, Terrence Simon, Tianhong Cui

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A highly sensitive lead ion sensor is developed using graphene ion-sensitive field-effect transistors (G-ISFETs) in an aqueous environmental setting. The sensing channel employs monolayer graphene, while a PVC membrane, incorporating a lead ionophore, serves as the ion-sensitive membrane. The sensor utilizes an electrochemical deposition technique to preconcentrate Pb ion concentration at the solution-sensor interface to enable detection at ultra-low concentration. Notably, the integrated sensor exhibits an exceptional sensitivity of - 36.7 mV/decade and achieves an ultra-low detection limit of 5.6x10-4 ppt, with a limit of quantitation (LOQ) set at 1.0x10-3 ppt.

Original language	English (US)
Title of host publication	IEEE 37th International Conference on Micro Electro Mechanical Systems, MEMS 2024
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	887-890
Number of pages	4
ISBN (Electronic)	9798350357929
DOIs	https://doi.org/10.1109/MEMS58180.2024.10439578
State	Published - 2024
Event	37th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2024 - Austin, United States Duration: Jan 21 2024 → Jan 25 2024

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	37th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2024
Country/Territory	United States
City	Austin
Period	1/21/24 → 1/25/24

Bibliographical note

Publisher Copyright:
© 2024 IEEE.

Keywords

Graphene field-effect transistor
electrochemical preconcentration
heavy metal
lead sensor
ultra-low detection limit

Publisher link

10.1109/MEMS58180.2024.10439578

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Xu, Y., Zhou, P., Simon, T., & Cui, T. (2024). Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor. In IEEE 37th International Conference on Micro Electro Mechanical Systems, MEMS 2024 (pp. 887-890). (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMS58180.2024.10439578

Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor. / Xu, Yingming; Zhou, Peng; Simon, Terrence et al.
IEEE 37th International Conference on Micro Electro Mechanical Systems, MEMS 2024. Institute of Electrical and Electronics Engineers Inc., 2024. p. 887-890 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, Y, Zhou, P, Simon, T & Cui, T 2024, Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor. in IEEE 37th International Conference on Micro Electro Mechanical Systems, MEMS 2024. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Institute of Electrical and Electronics Engineers Inc., pp. 887-890, 37th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2024, Austin, United States, 1/21/24. https://doi.org/10.1109/MEMS58180.2024.10439578

Xu Y, Zhou P, Simon T , Cui T. Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor. In IEEE 37th International Conference on Micro Electro Mechanical Systems, MEMS 2024. Institute of Electrical and Electronics Engineers Inc. 2024. p. 887-890. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMS58180.2024.10439578

Xu, Yingming ; Zhou, Peng ; Simon, Terrence et al. / Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor. IEEE 37th International Conference on Micro Electro Mechanical Systems, MEMS 2024. Institute of Electrical and Electronics Engineers Inc., 2024. pp. 887-890 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

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abstract = "A highly sensitive lead ion sensor is developed using graphene ion-sensitive field-effect transistors (G-ISFETs) in an aqueous environmental setting. The sensing channel employs monolayer graphene, while a PVC membrane, incorporating a lead ionophore, serves as the ion-sensitive membrane. The sensor utilizes an electrochemical deposition technique to preconcentrate Pb ion concentration at the solution-sensor interface to enable detection at ultra-low concentration. Notably, the integrated sensor exhibits an exceptional sensitivity of - 36.7 mV/decade and achieves an ultra-low detection limit of 5.6x10-4 ppt, with a limit of quantitation (LOQ) set at 1.0x10-3 ppt.",

keywords = "Graphene field-effect transistor, electrochemical preconcentration, heavy metal, lead sensor, ultra-low detection limit",

author = "Yingming Xu and Peng Zhou and Terrence Simon and Tianhong Cui",

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Y1 - 2024

N2 - A highly sensitive lead ion sensor is developed using graphene ion-sensitive field-effect transistors (G-ISFETs) in an aqueous environmental setting. The sensing channel employs monolayer graphene, while a PVC membrane, incorporating a lead ionophore, serves as the ion-sensitive membrane. The sensor utilizes an electrochemical deposition technique to preconcentrate Pb ion concentration at the solution-sensor interface to enable detection at ultra-low concentration. Notably, the integrated sensor exhibits an exceptional sensitivity of - 36.7 mV/decade and achieves an ultra-low detection limit of 5.6x10-4 ppt, with a limit of quantitation (LOQ) set at 1.0x10-3 ppt.

AB - A highly sensitive lead ion sensor is developed using graphene ion-sensitive field-effect transistors (G-ISFETs) in an aqueous environmental setting. The sensing channel employs monolayer graphene, while a PVC membrane, incorporating a lead ionophore, serves as the ion-sensitive membrane. The sensor utilizes an electrochemical deposition technique to preconcentrate Pb ion concentration at the solution-sensor interface to enable detection at ultra-low concentration. Notably, the integrated sensor exhibits an exceptional sensitivity of - 36.7 mV/decade and achieves an ultra-low detection limit of 5.6x10-4 ppt, with a limit of quantitation (LOQ) set at 1.0x10-3 ppt.

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Sensitive Lead Detection Through Integration of Electrochemical Deposition and Graphene Ion-Sensitive Field-Effect Transistor

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