Semiconductors with hetero-n-i-p-i superlattices

We propose a new type of artificial one-dimensional semiconductor superlatttice which combines the high charge carrier mobilities characteristic for modulation doped hetero-structure superlattices with the tunability of charge carrier concentration and subband structure of n-i-p-i doping superlattices. This type of system, e.g., allows for the investigation of the mobility of the charge carriers confined to the undoped layers as a function of their variable density.