Semianalytical model of the contact resistance in two-dimensional semiconductors

Roberto Grassi, Yanqing Wu, Steven J Koester, Tony Low

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional (2D) layered semiconductors, whose contacts are Schottky rather than Ohmic. Although there is a general consensus that the injection mechanism changes from thermionic to tunneling with gate biasing, existing models tend to oversimplify the transport problem, by neglecting the 2D transport nature and the modulation of the Schottky barrier height, the latter being of particular importance in back-gated devices. In this paper, we develop a semianalytical model based on Bardeen's transfer Hamiltonian approach to describe both effects. Remarkably, our model is able to reproduce several experimental observations of a metallic behavior in the contact resistance, i.e., a decreasing resistance with decreasing temperature, occurring at high gate voltages.

Original languageEnglish (US)
Article number165439
JournalPhysical Review B
Volume96
Issue number16
DOIs
StatePublished - Oct 30 2017

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Contact resistance
contact resistance
Semiconductor materials
Hamiltonians
thermionics
Modulation
injection
modulation
Electric potential
electric potential
electronics
Temperature
temperature

Cite this

Semianalytical model of the contact resistance in two-dimensional semiconductors. / Grassi, Roberto; Wu, Yanqing; Koester, Steven J; Low, Tony.

In: Physical Review B, Vol. 96, No. 16, 165439, 30.10.2017.

Research output: Contribution to journalArticle

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