This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current-voltage (I-V) measurements, thermal resistances of the thin films were determined by extracting the relationship between the channel temperature and the dissipated power. For a 26-nm-thick n-doped SrSnO3 channel with an area of 200 μm2, a thermal resistance of 260.1 ± 24.5 K mm/W was obtained. For a modest dissipated power of 0.5 W/mm, the channel temperature rose to ∼176 °C, a value which increases further at higher power levels. Electro-thermal simulations were performed which showed close agreement between the simulated and experimental I-V characteristics both in the absence and presence of self-heating. The work presented is critical for the development of perovskite-based high-power electronic devices.
Bibliographical noteFunding Information:
The work was primarily supported by the Air Force Office of Scientific Research (AFOSR) through Award No. FA9550-19-1-0245. T.K.T. acknowledges the support from the AFOSR through Award No. FA9550-21-1-0025. This work was supported partially by the National Science Foundation (NSF) through Award No. DMR-1741801. C.N.S. and U.S. were supported by NSF under Award No. ECCS-2019749 and by the II-VI Foundation Block Gift Program. Portions of this work were carried out at the Minnesota Nano Center, which receive support from NSF through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award No. ECCS-2025124. Parts of this work also were carried out at the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program under Award No. DMR-2011401.
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