Nanoscale Ti was grown on monohydride and bare Si(001) surface using TiCl4 as chemical vapor deposition precursor and an atomic hydrogen resist. TiCl4 showed no reaction with the monohydride resist layer, implying that Si monohydride surface is not as reactive as the di- or higher hydride phases. Repeatedly dosing the Si surface with TiCl4 and removing excess chlorine overcame the passivation of the Si surface and Ti clusters.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Applied Physics|
|State||Published - Aug 1999|