Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist

Toshiyuki Mitsui, Rob Curtis, Eric Ganz

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Nanoscale Ti was grown on monohydride and bare Si(001) surface using TiCl4 as chemical vapor deposition precursor and an atomic hydrogen resist. TiCl4 showed no reaction with the monohydride resist layer, implying that Si monohydride surface is not as reactive as the di- or higher hydride phases. Repeatedly dosing the Si surface with TiCl4 and removing excess chlorine overcame the passivation of the Si surface and Ti clusters.

Original languageEnglish (US)
Pages (from-to)1676-1679
Number of pages4
JournalJournal of Applied Physics
Volume86
Issue number3
DOIs
StatePublished - Aug 1999

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