Abstract
The selective growth of metal films by chemical vapor deposition processes is reviewed. A working definition of selectivity, based on the relative rates of nucleation on the growth and nongrowth surfaces, is proposed. After consideration of the factors that effect nucleation and a brief description of the methods used to measure selectivity, a review of the selective depositions of tungsten, copper, and aluminum will be presented.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1372-1388 |
| Number of pages | 17 |
| Journal | Chemistry of Materials |
| Volume | 5 |
| Issue number | 10 |
| DOIs | |
| State | Published - Jan 1 1993 |
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