Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories

Kong Soo Lee; Dae Han Yoo; Young Sub Yoo; Jae Jong Han; Seok Sik Kim; Hong Sik Jeong; Chang Jin Kang; Joo Tae Moon; Hyunho Park; Hanwook Jeong; Kwang Ryul Kim; Byoungdeog Choi

doi:10.1149/1.3375613

Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories

Kong Soo Lee
, Dae Han Yoo
, Young Sub Yoo
, Jae Jong Han
, Seok Sik Kim
, Hong Sik Jeong
, Chang Jin Kang
, Joo Tae Moon
, Hyunho Park
, Hanwook Jeong
, Kwang Ryul Kim
, Byoungdeog Choi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Vertical diodes for cross-point phase change memory were realized by selective epitaxial growth (SEG) technique using cyclic chemical vapor deposition method. H₂/SiH₄/Cl₂ cyclic CVD system was introduced in batch-type vertical furnace equipement, replacing conventional single-wafer H₂/dichlorosilane/HCl CVD system. It provided excellent capacity of 40 wafers per batch. Selectivity loss which is one of the most crucial features in SEG process for diode application was controlled with both the amount of SiH₄ and Cl₂ and the period of gas supply, and practical value of selectivity loss was confirmed to be less than 100 in 200-mm wafers. Structural and electrical properties of pn diodes were investigated, and cyclic SEG silicon diode showed more eligible electrical ability to current flow than that of poly-si in terms of forward current and ideality factor as well as lower reverse leakage current.

Original language	English (US)
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	281-286
Number of pages	6
Edition	1
ISBN (Electronic)	9781607681410
ISBN (Print)	9781566777919
DOIs	https://doi.org/10.1149/1.3375613
State	Published - 2010
Externally published	Yes

Publication series

Name	ECS Transactions
Number	1
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Publisher link

10.1149/1.3375613

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Lee, K. S., Yoo, D. H., Yoo, Y. S., Han, J. J., Kim, S. S., Jeong, H. S., Kang, C. J., Moon, J. T., Park, H., Jeong, H., Kim, K. R., & Choi, B. (2010). Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 281-286). (ECS Transactions; Vol. 28, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3375613

Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories. / Lee, Kong Soo; Yoo, Dae Han; Yoo, Young Sub et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. Electrochemical Society Inc., 2010. p. 281-286 (ECS Transactions; Vol. 28, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, KS, Yoo, DH, Yoo, YS, Han, JJ, Kim, SS, Jeong, HS, Kang, CJ, Moon, JT, Park, H, Jeong, H, Kim, KR & Choi, B 2010, Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 28, Electrochemical Society Inc., pp. 281-286. https://doi.org/10.1149/1.3375613

Lee KS, Yoo DH, Yoo YS, Han JJ, Kim SS, Jeong HS et al. Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 ed. Electrochemical Society Inc. 2010. p. 281-286. (ECS Transactions; 1). doi: 10.1149/1.3375613

Lee, Kong Soo ; Yoo, Dae Han ; Yoo, Young Sub et al. / Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories. Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1. ed. Electrochemical Society Inc., 2010. pp. 281-286 (ECS Transactions; 1).

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title = "Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories",

abstract = "Vertical diodes for cross-point phase change memory were realized by selective epitaxial growth (SEG) technique using cyclic chemical vapor deposition method. H2/SiH4/Cl2 cyclic CVD system was introduced in batch-type vertical furnace equipement, replacing conventional single-wafer H2/dichlorosilane/HCl CVD system. It provided excellent capacity of 40 wafers per batch. Selectivity loss which is one of the most crucial features in SEG process for diode application was controlled with both the amount of SiH4 and Cl2 and the period of gas supply, and practical value of selectivity loss was confirmed to be less than 100 in 200-mm wafers. Structural and electrical properties of pn diodes were investigated, and cyclic SEG silicon diode showed more eligible electrical ability to current flow than that of poly-si in terms of forward current and ideality factor as well as lower reverse leakage current.",

author = "Lee, \{Kong Soo\} and Yoo, \{Dae Han\} and Yoo, \{Young Sub\} and Han, \{Jae Jong\} and Kim, \{Seok Sik\} and Jeong, \{Hong Sik\} and Kang, \{Chang Jin\} and Moon, \{Joo Tae\} and Hyunho Park and Hanwook Jeong and Kim, \{Kwang Ryul\} and Byoungdeog Choi",

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doi = "10.1149/1.3375613",

language = "English (US)",

isbn = "9781566777919",

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AU - Lee, Kong Soo

AU - Yoo, Dae Han

AU - Yoo, Young Sub

AU - Han, Jae Jong

AU - Kim, Seok Sik

AU - Jeong, Hong Sik

AU - Kang, Chang Jin

AU - Moon, Joo Tae

AU - Park, Hyunho

AU - Jeong, Hanwook

AU - Kim, Kwang Ryul

AU - Choi, Byoungdeog

PY - 2010

Y1 - 2010

N2 - Vertical diodes for cross-point phase change memory were realized by selective epitaxial growth (SEG) technique using cyclic chemical vapor deposition method. H2/SiH4/Cl2 cyclic CVD system was introduced in batch-type vertical furnace equipement, replacing conventional single-wafer H2/dichlorosilane/HCl CVD system. It provided excellent capacity of 40 wafers per batch. Selectivity loss which is one of the most crucial features in SEG process for diode application was controlled with both the amount of SiH4 and Cl2 and the period of gas supply, and practical value of selectivity loss was confirmed to be less than 100 in 200-mm wafers. Structural and electrical properties of pn diodes were investigated, and cyclic SEG silicon diode showed more eligible electrical ability to current flow than that of poly-si in terms of forward current and ideality factor as well as lower reverse leakage current.

AB - Vertical diodes for cross-point phase change memory were realized by selective epitaxial growth (SEG) technique using cyclic chemical vapor deposition method. H2/SiH4/Cl2 cyclic CVD system was introduced in batch-type vertical furnace equipement, replacing conventional single-wafer H2/dichlorosilane/HCl CVD system. It provided excellent capacity of 40 wafers per batch. Selectivity loss which is one of the most crucial features in SEG process for diode application was controlled with both the amount of SiH4 and Cl2 and the period of gas supply, and practical value of selectivity loss was confirmed to be less than 100 in 200-mm wafers. Structural and electrical properties of pn diodes were investigated, and cyclic SEG silicon diode showed more eligible electrical ability to current flow than that of poly-si in terms of forward current and ideality factor as well as lower reverse leakage current.

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SN - 9781566777919

T3 - ECS Transactions

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BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6

PB - Electrochemical Society Inc.

ER -

Selective epitaxial growth of silicon layer using batch-type equipment for vertical diode application for next generation memories

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