Seeding solid phase crystallization of amorphous silicon films with embedded nanocrystals

Curtis Anderson; Uwe Kortshagen

doi:10.1557/proc-1066-a06-14

Seeding solid phase crystallization of amorphous silicon films with embedded nanocrystals

Curtis Anderson
, Uwe Kortshagen

Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Silicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.

Original language	English (US)
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
Publisher	Materials Research Society
Pages	185-190
Number of pages	6
ISBN (Print)	9781605110363
DOIs	https://doi.org/10.1557/proc-1066-a06-14
State	Published - 2008
Event	2008 MRS Spring Meeting - San Francisco, CA, United States Duration: Mar 25 2008 → Mar 27 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1066
ISSN (Print)	0272-9172

Other

Other	2008 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	3/25/08 → 3/27/08

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1557/proc-1066-a06-14

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Seeding solid phase crystallization of amorphous silicon films with embedded nanocrystals. / Anderson, Curtis; Kortshagen, Uwe.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008. Materials Research Society, 2008. p. 185-190 (Materials Research Society Symposium Proceedings; Vol. 1066).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Anderson, C & Kortshagen, U 2008, Seeding solid phase crystallization of amorphous silicon films with embedded nanocrystals. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008. Materials Research Society Symposium Proceedings, vol. 1066, Materials Research Society, pp. 185-190, 2008 MRS Spring Meeting, San Francisco, CA, United States, 3/25/08. https://doi.org/10.1557/proc-1066-a06-14

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abstract = "Silicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.",

author = "Curtis Anderson and Uwe Kortshagen",

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doi = "10.1557/proc-1066-a06-14",

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AB - Silicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.

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ER -

Seeding solid phase crystallization of amorphous silicon films with embedded nanocrystals

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