Seeding solid phase crystallization of amorphous silicon films with embedded nanocrystals

Curtis Anderson, Uwe Kortshagen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Silicon nanocrystals with diameters up to 30 nm are used as nucleation seeds for fast solid phase crystallization of amorphous silicon films. Purely amorphous films required an incubation time of up to 12 hours at 600°C prior to the onset of nucleation, while films with nanocrystals embedded between layers of amorphous silicon grew immediately upon annealing in a quartz tube furnace. Structural characterization was performed by heated-stage transmission electron microscopy and Raman spectroscopy.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
PublisherMaterials Research Society
Pages185-190
Number of pages6
ISBN (Print)9781605110363
DOIs
StatePublished - 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1066
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

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    Anderson, C., & Kortshagen, U. (2008). Seeding solid phase crystallization of amorphous silicon films with embedded nanocrystals. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008 (pp. 185-190). (Materials Research Society Symposium Proceedings; Vol. 1066). Materials Research Society. https://doi.org/10.1557/proc-1066-a06-14