Abstract
Using a new formalism that modifies a tight-binding Hamiltonian to include interaction with a time-dependent electromagnetic field, we have obtained an analytical expression for the second-order susceptibility. This expression has been used to calculate the energy dependence of (Formula presented) for GaAs. The results are in agreement with previous calculations and with available experimental data.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 15340-15343 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 23 |
| DOIs | |
| State | Published - 1998 |