Search for new high-κ dielectrics by combinatorial chemical vapor deposition

Bin Xia, Ryan Smith, Fang Chen, Stephen A. Campbell, Wayne L. Gladfelter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

To develop a high-κ gate dielectric for replacing SiO2 in MOSFETs, multi-component metal oxides could have advantages over single metal oxides because they may offer higher dielectric constants (κ's) as well as other favorable properties. To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems. Recently, we reported a combinatorial chemical vapor deposition (CVD) technique to deposit compositional spreads of ternary metal-oxides for high-κ dielectrics. In this work, compositional spreads of ZrO2, TiO2, SnO2 and HfO2 were deposited using anhydrous metal nitrates. By measuring chemical composition, film thickness, and electrical properties, we are able to map κ and establish its dependence on film composition. This high-throughput deposition technique allows us to generate a compositional library quickly for screening material properties. In addition, a crystalline phase which does not exist in any of the four pure oxides, α-PbO2, was detected.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsT-J. King, B. Yu, R.J.P. Lander, S. Saito
Pages33-37
Number of pages5
Volume765
StatePublished - 2003
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology - San Francisco, CA, United States
Duration: Apr 22 2003Apr 24 2003

Other

OtherMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS CMOS Front-End Materials and Process Technology
CountryUnited States
CitySan Francisco, CA
Period4/22/034/24/03

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