Scanning tunneling microscope studies of boron-doped Si(001)

J. F. Nielsen, H. J. Im, J. P. Pelz, M. Krueger, B. Borovsky, E. Ganz

Research output: Contribution to journalArticlepeer-review

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Abstract

We have used scanning tunneling microscopy (STM) and Auger electron spectroscopy to characterize B/Si(001) surface structures and the dependence of their density and location on high-temperature annealing. While annealing of heavily B-doped Si(001) surfaces is known to result in periodic SB step "fingers" whose density depends strongly on temperature, we have found that, on the time scale of formation of the step fingers, the atomic-scale properties of these surfaces are not altered significantly by high-temperature processing. B structures were found to decorate SA step edges. Hot STM was used to study the dynamics of finger formation and the interaction between atomic-scale B/Si(001) structures and fluctuating dimer rows.

Original languageEnglish (US)
Pages (from-to)1670-1675
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number4
DOIs
StatePublished - 1999

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