Scanning tunneling microscope studies of boron-doped Si(001)

J. F. Nielsen; H. J. Im; J. P. Pelz; M. Krueger; B. Borovsky; E. Ganz

doi:10.1116/1.581870

Scanning tunneling microscope studies of boron-doped Si(001)

J. F. Nielsen, H. J. Im, J. P. Pelz, M. Krueger, B. Borovsky, E. Ganz

Physics and Astronomy (Twin Cities)

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Abstract

We have used scanning tunneling microscopy (STM) and Auger electron spectroscopy to characterize B/Si(001) surface structures and the dependence of their density and location on high-temperature annealing. While annealing of heavily B-doped Si(001) surfaces is known to result in periodic S_B step "fingers" whose density depends strongly on temperature, we have found that, on the time scale of formation of the step fingers, the atomic-scale properties of these surfaces are not altered significantly by high-temperature processing. B structures were found to decorate S_A step edges. Hot STM was used to study the dynamics of finger formation and the interaction between atomic-scale B/Si(001) structures and fluctuating dimer rows.

Original language	English (US)
Pages (from-to)	1670-1675
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	17
Issue number	4
DOIs	https://doi.org/10.1116/1.581870
State	Published - 1999

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abstract = "We have used scanning tunneling microscopy (STM) and Auger electron spectroscopy to characterize B/Si(001) surface structures and the dependence of their density and location on high-temperature annealing. While annealing of heavily B-doped Si(001) surfaces is known to result in periodic SB step {"}fingers{"} whose density depends strongly on temperature, we have found that, on the time scale of formation of the step fingers, the atomic-scale properties of these surfaces are not altered significantly by high-temperature processing. B structures were found to decorate SA step edges. Hot STM was used to study the dynamics of finger formation and the interaction between atomic-scale B/Si(001) structures and fluctuating dimer rows.",

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AU - Nielsen, J. F.

AU - Im, H. J.

AU - Pelz, J. P.

AU - Krueger, M.

AU - Borovsky, B.

AU - Ganz, E.

PY - 1999

Y1 - 1999

N2 - We have used scanning tunneling microscopy (STM) and Auger electron spectroscopy to characterize B/Si(001) surface structures and the dependence of their density and location on high-temperature annealing. While annealing of heavily B-doped Si(001) surfaces is known to result in periodic SB step "fingers" whose density depends strongly on temperature, we have found that, on the time scale of formation of the step fingers, the atomic-scale properties of these surfaces are not altered significantly by high-temperature processing. B structures were found to decorate SA step edges. Hot STM was used to study the dynamics of finger formation and the interaction between atomic-scale B/Si(001) structures and fluctuating dimer rows.

AB - We have used scanning tunneling microscopy (STM) and Auger electron spectroscopy to characterize B/Si(001) surface structures and the dependence of their density and location on high-temperature annealing. While annealing of heavily B-doped Si(001) surfaces is known to result in periodic SB step "fingers" whose density depends strongly on temperature, we have found that, on the time scale of formation of the step fingers, the atomic-scale properties of these surfaces are not altered significantly by high-temperature processing. B structures were found to decorate SA step edges. Hot STM was used to study the dynamics of finger formation and the interaction between atomic-scale B/Si(001) structures and fluctuating dimer rows.

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Scanning tunneling microscope studies of boron-doped Si(001)

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