Scanning Kelvin Probe Microscopy Reveals Planar Defects Are Sources of Electronic Disorder in Organic Semiconductor Crystals

Yanfei Wu, Xinglong Ren, Kathryn A. Mcgarry, Matthew J. Bruzek, Christopher J. Douglas, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Electronic disorder in organic semiconductor single crystals, manifested as parallel surface potential domains with potential variations ranging from tens to hundreds of mV, is observed by scanning Kelvin probe microscopy. Chemical etching and X-ray diffraction indicate that the potential domains are correlated with planar defects such as stacking faults. The results have important implications for understanding structure–transport relationships in organic semiconductor single crystals.

Original languageEnglish (US)
Article number1700117
JournalAdvanced Electronic Materials
Volume3
Issue number7
DOIs
StatePublished - Jul 1 2017

Bibliographical note

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

  • Chemical etching
  • Organic single crystals
  • Planar defects
  • Scanning Kelvin probe microscopy
  • Surface potential

MRSEC Support

  • Primary

Fingerprint

Dive into the research topics of 'Scanning Kelvin Probe Microscopy Reveals Planar Defects Are Sources of Electronic Disorder in Organic Semiconductor Crystals'. Together they form a unique fingerprint.

Cite this