Scanning Kelvin Probe Microscopy Reveals Planar Defects Are Sources of Electronic Disorder in Organic Semiconductor Crystals

Yanfei Wu, Xinglong Ren, Kathryn A. Mcgarry, Matthew J. Bruzek, Christopher J. Douglas, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Electronic disorder in organic semiconductor single crystals, manifested as parallel surface potential domains with potential variations ranging from tens to hundreds of mV, is observed by scanning Kelvin probe microscopy. Chemical etching and X-ray diffraction indicate that the potential domains are correlated with planar defects such as stacking faults. The results have important implications for understanding structure–transport relationships in organic semiconductor single crystals.

Original languageEnglish (US)
Article number1700117
JournalAdvanced Electronic Materials
Volume3
Issue number7
DOIs
StatePublished - Jul 1 2017

Bibliographical note

Funding Information:
This work was partially supported by the National Science Foundation (NSF) under Grant No. DMR-0706011. This work was also partially supported by the NSF through the MRSEC program under Grant No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which also received partial support from NSF through the MRSEC program under Grant No. DMR-1420013. The authors acknowledge Dr. Victor G. Young, Jr. for performing temperature-dependent crystallography of FM-rubrene and rubrene single crystals.

Keywords

  • Chemical etching
  • Organic single crystals
  • Planar defects
  • Scanning Kelvin probe microscopy
  • Surface potential

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 4

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