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Electronic disorder in organic semiconductor single crystals, manifested as parallel surface potential domains with potential variations ranging from tens to hundreds of mV, is observed by scanning Kelvin probe microscopy. Chemical etching and X-ray diffraction indicate that the potential domains are correlated with planar defects such as stacking faults. The results have important implications for understanding structure–transport relationships in organic semiconductor single crystals.
Bibliographical noteFunding Information:
This work was partially supported by the National Science Foundation (NSF) under Grant No. DMR-0706011. This work was also partially supported by the NSF through the MRSEC program under Grant No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which also received partial support from NSF through the MRSEC program under Grant No. DMR-1420013. The authors acknowledge Dr. Victor G. Young, Jr. for performing temperature-dependent crystallography of FM-rubrene and rubrene single crystals.
- Chemical etching
- Organic single crystals
- Planar defects
- Scanning Kelvin probe microscopy
- Surface potential
How much support was provided by MRSEC?
Reporting period for MRSEC
- Period 4