Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

D. Winston; B. M. Cord; B. Ming; D. C. Bell; W. F. Dinatale; L. A. Stern; A. E. Vladar; M. T. Postek; M. K. Mondol; J. K.W. Yang; K. K. Berggren

doi:10.1116/1.3250204

Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

D. Winston, B. M. Cord, B. Ming, D. C. Bell, W. F. Dinatale, L. A. Stern, A. E. Vladar, M. T. Postek, M. K. Mondol, J. K.W. Yang, K. K. Berggren

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub- 10 nm -half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.

Original language	English (US)
Pages (from-to)	2702-2706
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	6
DOIs	https://doi.org/10.1116/1.3250204
State	Published - 2009
Externally published	Yes

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10.1116/1.3250204

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Winston, D., Cord, B. M., Ming, B., Bell, D. C., Dinatale, W. F., Stern, L. A., Vladar, A. E., Postek, M. T., Mondol, M. K., Yang, J. K. W., & Berggren, K. K. (2009). Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), 2702-2706. https://doi.org/10.1116/1.3250204

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abstract = "A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub- 10 nm -half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.",

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year = "2009",

doi = "10.1116/1.3250204",

language = "English (US)",

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AU - Winston, D.

AU - Cord, B. M.

AU - Ming, B.

AU - Bell, D. C.

AU - Dinatale, W. F.

AU - Stern, L. A.

AU - Vladar, A. E.

AU - Postek, M. T.

AU - Mondol, M. K.

AU - Yang, J. K.W.

AU - Berggren, K. K.

PY - 2009

Y1 - 2009

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AB - A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub- 10 nm -half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.

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Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

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