SCALPEL mask-membrane charging

M. Mkrtchyan, A. Gasparyan, K. Mkhoyan, A. Liddle, A. Novembre, D. Muller

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


Electrostatic charge generation and accumulation in a:SiNx thin films irradiated by energetic (100 keV) electrons is investigated and kinetic equations describing the dynamic process are formulated. It is found that the incident electrons, inelastically scattered in the membrane, primarily generate plasmons. The plasmon decay creates electron-hole pairs and secondary electrons (SE). The escape of the SEs from the target leads to a positive electrostatic charge accumulation in the membrane. It is shown that SCALPEL mask-membrane charging is defined by the balance of the SE escape, hole trapping and transport processes.

Original languageEnglish (US)
Pages (from-to)223-226
Number of pages4
JournalMicroelectronic Engineering
Issue number1
StatePublished - May 1999
EventProceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven
Duration: Sep 22 1998Sep 24 1998

Bibliographical note

Funding Information:
This work was partially supported by DARPA and SEMATECH


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