TY - GEN
T1 - Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model
AU - Kim, Jongyeon
AU - Zhao, Hui
AU - Jiang, Yanfeng
AU - Klemm, Angeline
AU - Wang, Jian Ping
AU - Kim, Chris H.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Spin transfer torque magnetoresistive random access memory (STT-MRAM) technology has been gaining interest as an alternative to SRAM as it possesses unique properties such as nonvolatility, higher density, and good scalability. Magnetic tunnel junctions (MTJs) based on shape anisotropy, interface anisotropy and crystal anisotropy have been demonstrated with the common goal of reducing the switching current while maintaining sufficient nonvolatility. However, the research community has yet to reach a strong consensus on which MTJ technology will prevail in deeply scaled technology nodes such as 8nm. To answer this open ended question, this paper presents a comprehensive study on the scalability of STT-MRAM based on various MTJ technologies: namely, in-plane MTJ (IMTJ), crystal perpendicular MTJ (c-PMTJ), and interface perpendicular MTJ (i-PMTJ). For a practical analysis, our simulation model captures key physics of STT switching in various MTJs by incorporating dimension-dependent effective anisotropy field (HKeff) into the Landau-Lifshitz-Gilbert (LLG) equation and considering realistic material parameters.
AB - Spin transfer torque magnetoresistive random access memory (STT-MRAM) technology has been gaining interest as an alternative to SRAM as it possesses unique properties such as nonvolatility, higher density, and good scalability. Magnetic tunnel junctions (MTJs) based on shape anisotropy, interface anisotropy and crystal anisotropy have been demonstrated with the common goal of reducing the switching current while maintaining sufficient nonvolatility. However, the research community has yet to reach a strong consensus on which MTJ technology will prevail in deeply scaled technology nodes such as 8nm. To answer this open ended question, this paper presents a comprehensive study on the scalability of STT-MRAM based on various MTJ technologies: namely, in-plane MTJ (IMTJ), crystal perpendicular MTJ (c-PMTJ), and interface perpendicular MTJ (i-PMTJ). For a practical analysis, our simulation model captures key physics of STT switching in various MTJs by incorporating dimension-dependent effective anisotropy field (HKeff) into the Landau-Lifshitz-Gilbert (LLG) equation and considering realistic material parameters.
UR - http://www.scopus.com/inward/record.url?scp=84906567089&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906567089&partnerID=8YFLogxK
U2 - 10.1109/DRC.2014.6872344
DO - 10.1109/DRC.2014.6872344
M3 - Conference contribution
AN - SCOPUS:84906567089
SN - 9781479954056
T3 - Device Research Conference - Conference Digest, DRC
SP - 155
EP - 156
BT - 72nd Device Research Conference, DRC 2014 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 72nd Device Research Conference, DRC 2014
Y2 - 22 June 2014 through 25 June 2014
ER -