Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons

Qin Zhang, Yeqing Lu, Huili Grace Xing, Steven J. Koester, Siyuranga O. Koswatta

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λeff is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that, even for a thick SiO2 back oxide, λeff can be improved efficiently by a thinner top oxide thickness and, to some extent, with high-kappa; dielectrics. The model is then applied to a self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier FETs (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for a large λeff, the scaling is limited by the conventional electrostatic short-channel effects. On the other hand, for a small λeff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100 mV/dec is still possible with a sub-10-nm gate length in GNR SB-FETs.

Original languageEnglish (US)
Article number5451189
Pages (from-to)531-533
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
StatePublished - Jun 2010

Bibliographical note

Funding Information:
Manuscript received February 10, 2010; revised February 26, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. This work was supported by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this letter was arranged by Editor A. Ortiz-Conde.


  • Graphene
  • Schottky barrier (SB)
  • Subthreshold swing
  • Thin body
  • Transistor scaling


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