Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons

Qin Zhang; Yeqing Lu; Huili Grace Xing; Steven J. Koester; Siyuranga O. Koswatta

doi:10.1109/LED.2010.2045100

Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons

Qin Zhang, Yeqing Lu, Huili Grace Xing, Steven J. Koester, Siyuranga O. Koswatta

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λ_eff is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that, even for a thick SiO₂ back oxide, λ_eff can be improved efficiently by a thinner top oxide thickness and, to some extent, with high-kappa; dielectrics. The model is then applied to a self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier FETs (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for a large λ_eff, the scaling is limited by the conventional electrostatic short-channel effects. On the other hand, for a small λ_eff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100 mV/dec is still possible with a sub-10-nm gate length in GNR SB-FETs.

Original language	English (US)
Article number	5451189
Pages (from-to)	531-533
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2045100
State	Published - Jun 2010

Bibliographical note

Funding Information:
Manuscript received February 10, 2010; revised February 26, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. This work was supported by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this letter was arranged by Editor A. Ortiz-Conde.

Keywords

Graphene
Schottky barrier (SB)
Subthreshold swing
Thin body
Transistor scaling

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10.1109/LED.2010.2045100

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title = "Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons",

abstract = "A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λeff is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that, even for a thick SiO2 back oxide, λeff can be improved efficiently by a thinner top oxide thickness and, to some extent, with high-kappa; dielectrics. The model is then applied to a self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier FETs (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for a large λeff, the scaling is limited by the conventional electrostatic short-channel effects. On the other hand, for a small λeff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100 mV/dec is still possible with a sub-10-nm gate length in GNR SB-FETs.",

keywords = "Graphene, Schottky barrier (SB), Subthreshold swing, Thin body, Transistor scaling",

author = "Qin Zhang and Yeqing Lu and Xing, {Huili Grace} and Koester, {Steven J.} and Koswatta, {Siyuranga O.}",

note = "Funding Information: Manuscript received February 10, 2010; revised February 26, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. This work was supported by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this letter was arranged by Editor A. Ortiz-Conde.",

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AU - Xing, Huili Grace

AU - Koester, Steven J.

AU - Koswatta, Siyuranga O.

N1 - Funding Information: Manuscript received February 10, 2010; revised February 26, 2010. Date of publication April 19, 2010; date of current version May 26, 2010. This work was supported by the Nanoelectronics Research Initiative through the Midwest Institute for Nanoelectronics Discovery. The review of this letter was arranged by Editor A. Ortiz-Conde.

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N2 - A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λeff is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that, even for a thick SiO2 back oxide, λeff can be improved efficiently by a thinner top oxide thickness and, to some extent, with high-kappa; dielectrics. The model is then applied to a self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier FETs (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for a large λeff, the scaling is limited by the conventional electrostatic short-channel effects. On the other hand, for a small λeff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100 mV/dec is still possible with a sub-10-nm gate length in GNR SB-FETs.

AB - A general solution for the electrostatic potential in an atomic-thin-body field-effect transistor (ATB-FET) geometry is presented. The effective electrostatic scaling length λeff is extracted from the analytical model, which cannot be approximated by the lowest order eigenmode as traditionally done in SOI-MOSFETs. An empirical equation for the scaling length that depends on the geometry parameters is proposed. It is shown that, even for a thick SiO2 back oxide, λeff can be improved efficiently by a thinner top oxide thickness and, to some extent, with high-kappa; dielectrics. The model is then applied to a self-consistent simulation of graphene nanoribbon (GNR) Schottky-barrier FETs (SB-FETs) at the ballistic limit. In the case of GNR SB-FETs, for a large λeff, the scaling is limited by the conventional electrostatic short-channel effects. On the other hand, for a small λeff, the scaling is limited by direct source-to-drain tunneling. A subthreshold swing below 100 mV/dec is still possible with a sub-10-nm gate length in GNR SB-FETs.

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KW - Thin body

KW - Transistor scaling

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Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons

Abstract

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