Abstract
It is shown that a heavily doped semiconductor with a high degree of compensation should have an S-type current-voltage characteristic at low temperatures. In a weak field the electrons in such a semiconductor are concentrated in isolated ″droplets″ and their contribution to the conductivity associated with these electric field heats the electron system and appreciably increases the population of the high-mobility states. This gives rise to a negative differential resistance region. The theoretical results are in good agreement with the experimental data obtained for strongly compensated samples of n-type InSb.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1682-1685 |
| Number of pages | 4 |
| Journal | Sov Phys Semicond |
| Volume | 5 |
| Issue number | 10 |
| State | Published - Jan 1 1972 |