It is shown that a heavily doped semiconductor with a high degree of compensation should have an S-type current-voltage characteristic at low temperatures. In a weak field the electrons in such a semiconductor are concentrated in isolated ″droplets″ and their contribution to the conductivity associated with these electric field heats the electron system and appreciably increases the population of the high-mobility states. This gives rise to a negative differential resistance region. The theoretical results are in good agreement with the experimental data obtained for strongly compensated samples of n-type InSb.
|Original language||English (US)|
|Number of pages||4|
|Journal||Sov Phys Semicond|
|State||Published - Jan 1 1972|