S-TYPE CURRENT-VOLTAGE CHARACTERISTIC OF A COMPENSATED SEMICONDUCTOR.

B. I. Shklovskii, M. S. Shur, A. L. Efros

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

It is shown that a heavily doped semiconductor with a high degree of compensation should have an S-type current-voltage characteristic at low temperatures. In a weak field the electrons in such a semiconductor are concentrated in isolated ″droplets″ and their contribution to the conductivity associated with these electric field heats the electron system and appreciably increases the population of the high-mobility states. This gives rise to a negative differential resistance region. The theoretical results are in good agreement with the experimental data obtained for strongly compensated samples of n-type InSb.

Original languageEnglish (US)
Pages (from-to)1682-1685
Number of pages4
JournalSov Phys Semicond
Volume5
Issue number10
StatePublished - Jan 1 1972

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