RuO2/Ru electrode on Si3N4/Si substrate for microelectromechanical systems devices based on Pb(Zr 1-xTix)O3 film and surface micromachining

Y. S. Yoon, J. H. Kim, A. M. Schimidt, D. L. Polla, Q. Wang, W. L. Gladfelter, Y. H. Shin

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

RuO2/Ru conducting films were deposited on low stress Si 3N4/Si substrates by reactive r.f. sputtering deposition at a substrate temperature of 400 °C to introduce a new bottom electrode for microelectromechanical system devices based on a Pb(Zr1-xTix)O3 film and a surface micromachining technique with high temperature processes. X-ray diffraction and scanning electron microscopy measurements after heat treatment at 700 °C were conducted to investigate structural stability of the RuO2/Ru films, which showed no silicide and silicon oxide formations by the heat treatment. Interfacial structures of the film with the heat treatment were similar to those of the as-deposited films. The surface of the film with the heat treatment consisted of larger grains than those of the as-deposited film. Rutherford backscattering spectrometry and Auger electron spectroscopy showed no interfacial reactions between the RuO2/Ru and the Si3N4. In order to investigate the feasibility of the RuO2/Ru as a bottom electrode, Pb(Zr0.53Ti 0.47)O3 films were deposited by metalorganic decomposition. After deposition of a Pb(Zr0.53Ti 0.47)O3 film at 700 °C for 30 min, the interface structure between the RuO2/Ru and the Pb(Zr 0.53Ti0.47)O3 film showed no interface reactions. The electrical properties of the PZT film on the RuO2/Ru were not changed before and after an HF etching to make an air gap, even though the piezoelectric coefficients on the RuO 2/Ru were lower than on the Pt/Ti. Therefore, the RuO 2/Ru conducting film could be used for a bottom electrode on the Si3N4/Si for a microelectromechanical system device based on a Pb(Zr1-xTi x)O3 film and a surface micromachining technique with high temperature processes.

Original languageEnglish (US)
Pages (from-to)465-471
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume9
Issue number6
DOIs
StatePublished - Dec 1 1998

Fingerprint Dive into the research topics of 'RuO<sub>2</sub>/Ru electrode on Si<sub>3</sub>N<sub>4</sub>/Si substrate for microelectromechanical systems devices based on Pb(Zr <sub>1-x</sub>Ti<sub>x</sub>)O<sub>3</sub> film and surface micromachining'. Together they form a unique fingerprint.

Cite this