Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

T. K. Higman; L. M. Miller; M. E. Favaro; M. A. Emanuel; K. Hess; J. J. Coleman

doi:10.1063/1.99931

Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

T. K. Higman
, L. M. Miller
, M. E. Favaro
, M. A. Emanuel
, K. Hess
, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.

Original language	English (US)
Pages (from-to)	1623-1625
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	17
DOIs	https://doi.org/10.1063/1.99931
State	Published - 1988

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title = "Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode",

abstract = "We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.",

author = "Higman, \{T. K.\} and Miller, \{L. M.\} and Favaro, \{M. E.\} and Emanuel, \{M. A.\} and K. Hess and Coleman, \{J. J.\}",

year = "1988",

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pages = "1623--1625",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

AU - Higman, T. K.

AU - Miller, L. M.

AU - Favaro, M. E.

AU - Emanuel, M. A.

AU - Hess, K.

AU - Coleman, J. J.

PY - 1988

Y1 - 1988

N2 - We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.

AB - We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.

UR - https://www.scopus.com/pages/publications/0039803510

UR - https://www.scopus.com/pages/publications/0039803510#tab=citedBy

U2 - 10.1063/1.99931

DO - 10.1063/1.99931

M3 - Article

AN - SCOPUS:0039803510

SN - 0003-6951

VL - 53

SP - 1623

EP - 1625

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

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