Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode

T. K. Higman, L. M. Miller, M. E. Favaro, M. A. Emanuel, K. Hess, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We report new experimental results on the heterostructure hot-electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction-band offset. These devices exhibit significant S-shaped negative differential resistance and dc switching at 300 K.

Original languageEnglish (US)
Pages (from-to)1623-1625
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number17
DOIs
StatePublished - Dec 1 1988

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