Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet

Mahendra Dc; Tao Liu; Jun Yang Chen; Thomas Peterson; Protyush Sahu; Hongshi Li; Zhengyang Zhao; Mingzhong Wu; Jian Ping Wang

doi:10.1063/1.5054806

Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet

Mahendra Dc, Tao Liu, Jun Yang Chen, Thomas Peterson, Protyush Sahu, Hongshi Li, Zhengyang Zhao, Mingzhong Wu, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We investigated spin-to-charge current conversion in sputtered Y₃Fe₅O₁₂ (YIG)/granular bismuth selenide (GBS) bi-layers at room temperature. The spin current is pumped to the GBS layer by the precession of magnetization at ferromagnetic resonance in the YIG layer. The spin-mixing conductance is determined to be as large as (13.64 ± 1.32) × 10¹⁸ m^-2, which is larger than that of YIG/Pt and comparable or better than that of YIG/crystalline bismuth selenide indicating that GBS is a good spin-sink. The figure of merit of spin-to-charge conversion, the inverse Edelstein effect length (λIEE), is estimated to be as large as (0.11 ± 0.03) nm. λIEE shows GBS film thickness dependence, and its value is three times as large as in crystalline bismuth selenide. The λIEE value larger than that of crystalline bismuth selenide and other topological insulators indicates that the spin-to-charge conversion is due to the spin-momentum locking. As the thickness of GBS increases, λIEE decreases, which means the figure-of-merit of spin-to-charge conversion is influenced by grain size.

Original language	English (US)
Article number	102401
Journal	Applied Physics Letters
Volume	114
Issue number	10
DOIs	https://doi.org/10.1063/1.5054806
State	Published - Mar 11 2019

Bibliographical note

Funding Information:
We would like to thank Jason C. Meyers for TEM. This work was supported in part by ASCENT, one of the six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. Part of this work was carried out in the Minnesota Nano Center, which was supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award No. ECCS-1542202. At CSU, the film growth was supported by the U.S. National Science Foundation (No. EFMA-1641989), and the film characterization was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences (No. DESC0018994). We would also like to thank C-SPIN for the initial support of this project.

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@article{cf51f48b063843018974a4d477630878,

title = "Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet",

abstract = "We investigated spin-to-charge current conversion in sputtered Y3Fe5O12 (YIG)/granular bismuth selenide (GBS) bi-layers at room temperature. The spin current is pumped to the GBS layer by the precession of magnetization at ferromagnetic resonance in the YIG layer. The spin-mixing conductance is determined to be as large as (13.64 ± 1.32) × 1018 m-2, which is larger than that of YIG/Pt and comparable or better than that of YIG/crystalline bismuth selenide indicating that GBS is a good spin-sink. The figure of merit of spin-to-charge conversion, the inverse Edelstein effect length (λIEE), is estimated to be as large as (0.11 ± 0.03) nm. λIEE shows GBS film thickness dependence, and its value is three times as large as in crystalline bismuth selenide. The λIEE value larger than that of crystalline bismuth selenide and other topological insulators indicates that the spin-to-charge conversion is due to the spin-momentum locking. As the thickness of GBS increases, λIEE decreases, which means the figure-of-merit of spin-to-charge conversion is influenced by grain size.",

author = "Mahendra Dc and Tao Liu and Chen, {Jun Yang} and Thomas Peterson and Protyush Sahu and Hongshi Li and Zhengyang Zhao and Mingzhong Wu and Wang, {Jian Ping}",

note = "Funding Information: We would like to thank Jason C. Meyers for TEM. This work was supported in part by ASCENT, one of the six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. Part of this work was carried out in the Minnesota Nano Center, which was supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award No. ECCS-1542202. At CSU, the film growth was supported by the U.S. National Science Foundation (No. EFMA-1641989), and the film characterization was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences (No. DESC0018994). We would also like to thank C-SPIN for the initial support of this project. Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = mar,

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doi = "10.1063/1.5054806",

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volume = "114",

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T1 - Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet

AU - Dc, Mahendra

AU - Liu, Tao

AU - Chen, Jun Yang

AU - Peterson, Thomas

AU - Sahu, Protyush

AU - Li, Hongshi

AU - Zhao, Zhengyang

AU - Wu, Mingzhong

AU - Wang, Jian Ping

N1 - Funding Information: We would like to thank Jason C. Meyers for TEM. This work was supported in part by ASCENT, one of the six centers in JUMP, a Semiconductor Research Corporation (SRC) program sponsored by DARPA. Part of this work was carried out in the Minnesota Nano Center, which was supported by the National Science Foundation through the National Nano Coordinated Infrastructure Network (NNCI) under Award No. ECCS-1542202. At CSU, the film growth was supported by the U.S. National Science Foundation (No. EFMA-1641989), and the film characterization was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences (No. DESC0018994). We would also like to thank C-SPIN for the initial support of this project. Publisher Copyright: © 2019 Author(s).

PY - 2019/3/11

Y1 - 2019/3/11

N2 - We investigated spin-to-charge current conversion in sputtered Y3Fe5O12 (YIG)/granular bismuth selenide (GBS) bi-layers at room temperature. The spin current is pumped to the GBS layer by the precession of magnetization at ferromagnetic resonance in the YIG layer. The spin-mixing conductance is determined to be as large as (13.64 ± 1.32) × 1018 m-2, which is larger than that of YIG/Pt and comparable or better than that of YIG/crystalline bismuth selenide indicating that GBS is a good spin-sink. The figure of merit of spin-to-charge conversion, the inverse Edelstein effect length (λIEE), is estimated to be as large as (0.11 ± 0.03) nm. λIEE shows GBS film thickness dependence, and its value is three times as large as in crystalline bismuth selenide. The λIEE value larger than that of crystalline bismuth selenide and other topological insulators indicates that the spin-to-charge conversion is due to the spin-momentum locking. As the thickness of GBS increases, λIEE decreases, which means the figure-of-merit of spin-to-charge conversion is influenced by grain size.

AB - We investigated spin-to-charge current conversion in sputtered Y3Fe5O12 (YIG)/granular bismuth selenide (GBS) bi-layers at room temperature. The spin current is pumped to the GBS layer by the precession of magnetization at ferromagnetic resonance in the YIG layer. The spin-mixing conductance is determined to be as large as (13.64 ± 1.32) × 1018 m-2, which is larger than that of YIG/Pt and comparable or better than that of YIG/crystalline bismuth selenide indicating that GBS is a good spin-sink. The figure of merit of spin-to-charge conversion, the inverse Edelstein effect length (λIEE), is estimated to be as large as (0.11 ± 0.03) nm. λIEE shows GBS film thickness dependence, and its value is three times as large as in crystalline bismuth selenide. The λIEE value larger than that of crystalline bismuth selenide and other topological insulators indicates that the spin-to-charge conversion is due to the spin-momentum locking. As the thickness of GBS increases, λIEE decreases, which means the figure-of-merit of spin-to-charge conversion is influenced by grain size.

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ER -

Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet

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