Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Matthew C. Robbins; Prafful Golani; Steven J. Koester

doi:10.1109/LED.2019.2946763

Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Matthew C. Robbins
, Prafful Golani
, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.

Original language	English (US)
Article number	8865564
Pages (from-to)	1988-1991
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1109/LED.2019.2946763
State	Published - Dec 2019

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Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Black phosphorus
effective mass
nanotechnology
tunneling

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title = "Right-Angle Black Phosphorus Tunneling Field Effect Transistor",

abstract = "We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher \{I\} \{\textbackslash{}mathrm\{\textbackslash{}scriptscriptstyle ON\}\} / \{I\} \{ \textbackslash{}mathrm\{\textbackslash{}scriptscriptstyle OFF\}\} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.",

keywords = "Black phosphorus, effective mass, nanotechnology, tunneling",

author = "Robbins, \{Matthew C.\} and Prafful Golani and Koester, \{Steven J.\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2019",

month = dec,

doi = "10.1109/LED.2019.2946763",

language = "English (US)",

volume = "40",

pages = "1988--1991",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Right-Angle Black Phosphorus Tunneling Field Effect Transistor

AU - Robbins, Matthew C.

AU - Golani, Prafful

AU - Koester, Steven J.

PY - 2019/12

Y1 - 2019/12

N2 - We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.

AB - We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.

KW - Black phosphorus

KW - effective mass

KW - nanotechnology

KW - tunneling

UR - https://www.scopus.com/pages/publications/85076316755

UR - https://www.scopus.com/pages/publications/85076316755#tab=citedBy

U2 - 10.1109/LED.2019.2946763

DO - 10.1109/LED.2019.2946763

M3 - Article

AN - SCOPUS:85076316755

SN - 0741-3106

VL - 40

SP - 1988

EP - 1991

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 8865564

ER -

Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Abstract

Bibliographical note

Keywords

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MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

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Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

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Other files and links

Fingerprint

Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this