Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Matthew C. Robbins, Prafful Golani, Steven J. Koester

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.

Original languageEnglish (US)
Article number8865564
Pages (from-to)1988-1991
Number of pages4
JournalIEEE Electron Device Letters
Issue number12
StatePublished - Dec 2019

Bibliographical note

Funding Information:
Manuscript received September 25, 2019; accepted October 6, 2019. Date of publication October 11, 2019; date of current version November 27, 2019. This work was supported by the National Science Foundation (NSF) under Award ECCS-1708769. This work also utilized the University of Minnesota Characterization Facility which receives capital equipment support from the NSF through the University of Minnesota MRSEC under Award DMR-1420013. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the National Nanotechnology Coordinated Infrastructure under Award ECCS-1542202. The review of this letter was arranged by Editor G. Han. (Corresponding author: Steven J. Koester.) M. C. Robbins was with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA. He is now with Honeywell Aerospace, Plymouth, MN 55441 USA.

Publisher Copyright:
© 1980-2012 IEEE.


  • Black phosphorus
  • effective mass
  • nanotechnology
  • tunneling

MRSEC Support

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