Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Matthew C. Robbins; Prafful Golani; Steven J. Koester

doi:10.1109/LED.2019.2946763

Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Matthew C. Robbins, Prafful Golani, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.

Original language	English (US)
Article number	8865564
Pages (from-to)	1988-1991
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	12
DOIs	https://doi.org/10.1109/LED.2019.2946763
State	Published - Dec 2019

Bibliographical note

Funding Information:
Manuscript received September 25, 2019; accepted October 6, 2019. Date of publication October 11, 2019; date of current version November 27, 2019. This work was supported by the National Science Foundation (NSF) under Award ECCS-1708769. This work also utilized the University of Minnesota Characterization Facility which receives capital equipment support from the NSF through the University of Minnesota MRSEC under Award DMR-1420013. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the National Nanotechnology Coordinated Infrastructure under Award ECCS-1542202. The review of this letter was arranged by Editor G. Han. (Corresponding author: Steven J. Koester.) M. C. Robbins was with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA. He is now with Honeywell Aerospace, Plymouth, MN 55441 USA.

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Black phosphorus
effective mass
nanotechnology
tunneling

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title = "Right-Angle Black Phosphorus Tunneling Field Effect Transistor",

abstract = "We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.",

keywords = "Black phosphorus, effective mass, nanotechnology, tunneling",

author = "Robbins, {Matthew C.} and Prafful Golani and Koester, {Steven J.}",

note = "Funding Information: Manuscript received September 25, 2019; accepted October 6, 2019. Date of publication October 11, 2019; date of current version November 27, 2019. This work was supported by the National Science Foundation (NSF) under Award ECCS-1708769. This work also utilized the University of Minnesota Characterization Facility which receives capital equipment support from the NSF through the University of Minnesota MRSEC under Award DMR-1420013. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the National Nanotechnology Coordinated Infrastructure under Award ECCS-1542202. The review of this letter was arranged by Editor G. Han. (Corresponding author: Steven J. Koester.) M. C. Robbins was with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA. He is now with Honeywell Aerospace, Plymouth, MN 55441 USA. Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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AU - Golani, Prafful

AU - Koester, Steven J.

N1 - Funding Information: Manuscript received September 25, 2019; accepted October 6, 2019. Date of publication October 11, 2019; date of current version November 27, 2019. This work was supported by the National Science Foundation (NSF) under Award ECCS-1708769. This work also utilized the University of Minnesota Characterization Facility which receives capital equipment support from the NSF through the University of Minnesota MRSEC under Award DMR-1420013. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the National Nanotechnology Coordinated Infrastructure under Award ECCS-1542202. The review of this letter was arranged by Editor G. Han. (Corresponding author: Steven J. Koester.) M. C. Robbins was with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA. He is now with Honeywell Aerospace, Plymouth, MN 55441 USA. Publisher Copyright: © 1980-2012 IEEE.

PY - 2019/12

Y1 - 2019/12

N2 - We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.

AB - We report experimental demonstration of a right-angle black phosphorus (BP) tunneling field effect transistor (TFET). This device utilizes the effective mass anisotropy between the armchair (AC) and zigzag (ZZ) crystal orientations in BP as a means of inducing asymmetry between source and drain tunneling. As a result of this asymmetry, the BP TFET displays a higher {I} {\mathrm{\scriptscriptstyle ON}} / {I} { \mathrm{\scriptscriptstyle OFF}} ratio by 2 orders of magnitude and steeper SS than BP TFETs oriented along either the AC or ZZ direction only.

KW - Black phosphorus

KW - effective mass

KW - nanotechnology

KW - tunneling

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M3 - Article

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SN - 0741-3106

VL - 40

SP - 1988

EP - 1991

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 8865564

ER -

Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Abstract

Bibliographical note

Keywords

MRSEC Support

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University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

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Right-Angle Black Phosphorus Tunneling Field Effect Transistor

Abstract

Bibliographical note

Keywords

MRSEC Support

Publisher link

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Projects

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

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