The trends produced by chemical vapor deposition (CVD) explained by the relative abundance of acetylene at the diamond surface during film growth are presented. Diamond film growth experiments were conducted using an RF plasma torch operating in the pressure range 267-1013 mbar. The plasma consists of argon and hydrogen with injected methane. Gas was sampled through a micro-orifice in the center of the film growth substrate and delivered to a gas chromatography, which provides measurements of several stable chemical species. A detailed 2D numerical model was developed of the and chemistry in the region between the torch exit and the substrate.
|Original language||English (US)|
|Number of pages||1|
|Journal||IEEE International Conference on Plasma Science|
|State||Published - Jan 1 2000|
|Event||ICOPS 2000 - 27th IEEE International Conference on Plasma Science - New Orleans, LA, USA|
Duration: Jun 4 2000 → Jun 7 2000