RF systems based on silicon-on-sapphire technology

I. Lagnado, P. R. de la Houssaye, W. B. Dubbelday, S. J. Koester, R. Hammond, J. O. Chu, J. A. Ott, P. M. Mooney, L. Perraud, K. A. Jenkins

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The major issues, which confronted the formation of very thin layers of silicon (30-100 nm) on sapphire substrates for application to mm-wave communication and sensors were investigated. The focus of the investigation was, and still is, to achieve a structure in which the modern CMOS technology, the mainstay technology and workhorse of the electronic revolution, can be affordably continued. In this context the application of device-quality thin film silicon-on-sapphire (TFSOS), obtained by Solid Phase Epitaxy (SPE), and the growth of strained silicon-germanium (SiGe) layers on these improved thin silicon films on sapphire have demonstrated enhanced devices and circuits performance. We have fabricated 250 nm and 100nm T-gated devices with noise figures as low as 0.9 dB at 2 GHz with an associated gain of 21 dB, and 2.5dB at 20 GHz, with an associated gain of 7.5dB, respectively. These performances resulted in distributed wide-band amplifiers (10 GHz BW, world record) and tuned amplifiers (15 dB peak gain, 4 GHz BW), among others. Additionally, VCOs (25.9 GHz) and frequency dividers in excess of 30 GHz were fabricated with devices with ft (fmax) of 105 GHz (50 GHz) for n-channel and 49 GHz (>110 GHz) for p-MODFETs with 100 nm T-gates (strained Si0.2Ge0.8 on a relaxed Si0.7Ge0.3 heterostructure).

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Number of pages2
StatePublished - Dec 1 2000


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