Abstract
Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1666-1668 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 48 |
| Issue number | 24 |
| DOIs | |
| State | Published - 1986 |
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