Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition

S. Ray, P. Ruden, V. Sokolov, R. Kolbas, T. Boonstra, J. Williams

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.

Original languageEnglish (US)
Pages (from-to)1666-1668
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number24
DOIs
StatePublished - Dec 1 1986

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resonant tunneling
metalorganic chemical vapor deposition
aluminum gallium arsenides
quantum wells
oscillations
spacers
valleys
microwaves
electric potential

Cite this

Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition. / Ray, S.; Ruden, P.; Sokolov, V.; Kolbas, R.; Boonstra, T.; Williams, J.

In: Applied Physics Letters, Vol. 48, No. 24, 01.12.1986, p. 1666-1668.

Research output: Contribution to journalArticle

Ray, S. ; Ruden, P. ; Sokolov, V. ; Kolbas, R. ; Boonstra, T. ; Williams, J. / Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition. In: Applied Physics Letters. 1986 ; Vol. 48, No. 24. pp. 1666-1668.
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